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ATZelektronik worldwide

, Volume 13, Issue 2, pp 48–51 | Cite as

Silicon carbide semiconductors for the e-powertrain

  • Torsten Bürger
  • Katharina Berberich
  • Stephan Prüfling
Development Power Electronics
  • 50 Downloads

New trails have to be blazed for electrifying the powertrain. Power semiconductors made from silicon carbide could be an interesting solution for frequency converters and rectifiers. AVL explains the benefits such as quicker switch frequencies as well as reduced weight and volume with this semiconductor material in comparison to traditionally used silicon-based IGBT power semiconductors.

Technical Advantages

In recent years, the interest of a power semiconductor based on silicon carbide (SiC) increased in the context of the powertrain electrification. The main technical advantages of this wide band gap semiconductor material can be seen in all the essential operating parameters, Figure 1. The latest SiC semiconductors with reverse voltages up to 1.2 kV offer by factors higher switching frequencies than conventional, silicon (Si) based power semiconductors. They also score in power and filter circuits with an associated weight and volume reduction of the installed L and C components....

Copyright information

© Springer Automotive Media 2018

Authors and Affiliations

  • Torsten Bürger
    • 1
  • Katharina Berberich
    • 1
  • Stephan Prüfling
    • 1
  1. 1.AVLRegensburgGermany

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