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Electronic Materials Letters

, Volume 14, Issue 5, pp 574–580 | Cite as

Impact of Various Charge States of Hydrogen on Passivation of Dislocation in Silicon

  • Lihui Song
  • Jingjing Lou
  • Jiayi Fu
  • Zhenguo Ji
Article

Abstract

Dislocation, one of typical crystallographic defects in silicon, is detrimental to the minority carrier lifetime of silicon wafer. Hydrogen passivation is able to reduce the recombination activity of dislocation, however, the passivation efficacy is strongly dependent on the experimental conditions. In this paper, a model based on the theory of hydrogen charge state control is proposed to explain the passivation efficacy of dislocation correlated to the peak temperature of thermal annealing and illumination intensity. Experimental results support the prediction of the model that a mix of positively charged hydrogen and negatively charged hydrogen at certain ratio can maximise the passivation efficacy of dislocation, leading to a better power conversion efficiency of silicon solar cell with dislocation in it.

Keywords

Dislocation Hydrogen passivation Charge states Silicon solar cell 

Notes

Acknowledgements

The authors would like to thank National Natural Science Foundation of China (Nos. 51602085) and Hangzhou Dianzi University (ZX150204307002/016) for the research funding. The authors declare that they have no conflict of interest.

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Copyright information

© The Korean Institute of Metals and Materials 2018

Authors and Affiliations

  1. 1.College of Materials and Environmental EngineeringHangzhou Dianzi UniversityHangzhouChina

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