Electronic Materials Letters

, Volume 14, Issue 4, pp 426–431 | Cite as

Thermomechanical In Situ Monitoring of Bi2Te3 Thin Film and Its Relationship with Microstructure and Thermoelectric Performances

  • Min-Woo Jeong
  • Sekwon Na
  • Haishan Shin
  • Hong-Bum Park
  • Hoo-Jeong Lee
  • Young-Chang Joo


Performance enhancement has been studied for thin-film thermoelectric materials for small-scale energy applications. The microstructural evolution of bismuth telluride (Bi2Te3) was investigated with respect to performance enhancement via in situ thermomechanical analysis due to the post-annealing process. The thermomechanical behavior of Bi2Te3 changes gradually at approximately 200 °C with the formation of a quintuple-layer structure, which was confirmed by X-ray diffraction, transmission electron microscopy and Raman spectroscopy. It was found that highly oriented (006), (0015) was formed with a quintuple-layer structure parallel to the substrate, and the E g 2 Raman vibration mode of Bi2Te3 significantly increased after forming the layer structure with decreased defects. Therefore, the slope of the stress curve was affected by the longer atomic distance of the van der Waals bonds with the formation of (00l) oriented layered-structure grain. The decreased number of defects in the layer structure affects the electrical and thermal properties of the Bi2Te3 thin film. Due to the microstructural evolution, the power factor of Bi2Te3 was enhanced by approximately 14.8 times by the quintuple-layer structure of Bi2Te3 formed during the annealing process, which contributed to a better understanding of the performance enhancement via post-annealing and to research on other highly oriented layer structure materials.

Graphical Abstract


Bi2Te3 In situ thermomechanical analysis Quintuple layer Thermoelectric Thin film 



This research was supported by the MOTIE(Ministry of Trade, Industry & Energy [10049130] and KSRC(Korea Semiconductor Research Consortium) support program for the development of the future semiconductor device.


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Copyright information

© The Korean Institute of Metals and Materials 2018

Authors and Affiliations

  1. 1.Department of Materials Science and EngineeringSeoul National UniversitySeoulKorea
  2. 2.Department of Advanced Materials Science and EngineeringSungkyunkwan UniversitySuwonKorea

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