Electronic Materials Letters

, Volume 15, Issue 2, pp 166–170 | Cite as

Improved Device Ideality in Aged Organic Transistors

  • Chang-Hyun KimEmail author
Original Article - Electronics, Magnetics and Photonics


The origin of ideality improvement in aged dinaphtho[2,3-b:2′,3′-f]thieno[3,2-b]thiophene (DNTT) transistors is explored. High-performance plastic transistors exhibit nontrivial enhancements under ambient conditions, in the light of emerging parameterization scheme that elucidates the linearity of the transfer curves. Unintentional carrier doping in exceptionally stable DNTT molecules is suggested as the major driver of the recovery of an ideal state of the functional devices, thoroughly investigated by analytical decoupling of the channel and contact potentials as well as numerical finite-element simulation on parametric interplays.

Graphical Abstract


Organic semiconductors Field-effect transistors DNTT Device ideality Aging 



This work was supported by the Gachon University research fund of 2018 (GCU-2018-0290).


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Copyright information

© The Korean Institute of Metals and Materials 2018

Authors and Affiliations

  1. 1.Department of Electronic EngineeringGachon UniversitySeongnamRepublic of Korea

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