Electronic Materials Letters

, Volume 15, Issue 2, pp 171–178 | Cite as

Electrical Properties of a ZTO Thin-Film Transistor Prepared with Near-Field Electrohydrodynamic Jet Spraying

  • Woon-Seop ChoiEmail author
Original Article - Electronics, Magnetics and Photonics


Zinc-tin oxide (ZTO) thin-films were prepared by applying a near-field around the tip of electro-hydrodynamic (EHD) jet spray system and characterized. Oval shaped multi droplets were obtained by the near-field assisted EHD (NF-EHD) jet spray. The optimized condition of an approximately 2.5 to 3 volts difference between the tip and near-field enabled the oxide semiconductor solution to spray properly. The electrical properties of ZTO thin-film transistor showed a mobility of 2.96 cm2/Vs, an on-to-off ratio of 107, a threshold voltage of 4.40 V, a subthreshold slope of 0.54 V/dec, and. Improved stability under bias stress and relaxation after stress were observed after applying a near-field to the EHD jet spray system.

Graphical Abstract


Electrical Properties Near-field Electrohydrodynamic Jet Spray Oxide TFT 



Author really appreciate Y.-J. Kwack’s experimental support. This work was supported by the Basic Science Research Program through the National Research Foundation (NRF) funded by the Ministry of Education, Science and Technology (NRF-2015R1A2A2A01003765).


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Copyright information

© The Korean Institute of Metals and Materials 2018

Authors and Affiliations

  1. 1.Department of Display EngineeringHoseo UniversityAsan-SiKorea

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