Formation of the CdTe, Zn0.04Cd0.96Te and Cd0.2Hg0.8Te polished surfaces at the chemical etching by HNO3–HI–ethylene glycol solutions

Abstract

Chemical–mechanical polishing of the CdTe and ZnxCd1-xTe, CdxHg1-xTe solid solutions single crystals surfaces by iodine-evolving etching compositions based on aqueous solutions of HNO3–HI–ethylene glycol has been investigated. The dependences of the chemical–mechanical polishing rate on the dilution of the base polishing etchant with ethylene glycol have been established. The polished surface condition after chemical–mechanical polishing using metallographic analysis, atomic force microscopy and X-ray microanalysis have been investigated. Using X-ray microanalysis, we have monitored the concentrations of the host elements (Cd, [Cd + Hg], [Zn + Cd] and Te) and possible contamination with chemical compounds present in the etchants and the solutions used to rinse the samples. The polishing etchant compositions and conditions of conducting the process of chemical–mechanical polishing for forming a high-quality polished surface of CdTe, Zn0.04Cd0.96Te and Cd0.2Hg0.8Te crystals have been optimized.

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Correspondence to G. P. Malanych.

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Malanych, G.P., Hvozdiyevskyi, Y.Y., Tomashyk, V.M. et al. Formation of the CdTe, Zn0.04Cd0.96Te and Cd0.2Hg0.8Te polished surfaces at the chemical etching by HNO3–HI–ethylene glycol solutions. Appl Nanosci (2021). https://doi.org/10.1007/s13204-021-01720-y

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Keywords

  • Cadmium telluride
  • Solid solutions
  • Chemical–mechanical polishing
  • Chemical etchant
  • Single crystal