The process of cutting, mechanical and chemical treatment of the PbTe and Pb1−xSnxTe crystal surface has been studied. The dependences of the chemical–mechanical polishing rate versus the dilution of the basic polishing etchant H2O2 + HBr + ethylene glycol by the glycerol have been determined. The etchant compositions are selected to implement controllable removal of semiconductors layers at a rate of 1–185 μm min−1, with such quality of the single crystals surface that allows the subsequent procedures specified by planar technology and the microscopic structural studies. The surface states after chemical etching have been investigated using electron, metallographic and atomic force microscopy. Using X-ray microanalysis, we have monitored the concentrations of the host elements (Pb and Te) and possible contamination with chemical compounds present in the etchants and the solutions used to rinse the samples. It was shown that the surface state is improved after chemical etching.
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The authors declare that they have no competing interests.
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Malanych, G.P., Tomashyk, V.M. & Korchovyi, A.A. Formation of nanosized relief on PbTe and Pb1−xSnxTe substrates surface during nonabrasive chemical–mechanical polishing by (H2O2 + HBr + ethylene glycol)/glycerol etchant compositions. Appl Nanosci 10, 4637–4643 (2020). https://doi.org/10.1007/s13204-020-01303-3
- Chemical–mechanical polishing
- Lead telluride
- Solid solutions
- Dissolution rate