Abstract
The process of cutting, mechanical and chemical treatment of the PbTe and Pb1−xSnxTe crystal surface has been studied. The dependences of the chemical–mechanical polishing rate versus the dilution of the basic polishing etchant H2O2 + HBr + ethylene glycol by the glycerol have been determined. The etchant compositions are selected to implement controllable removal of semiconductors layers at a rate of 1–185 μm min−1, with such quality of the single crystals surface that allows the subsequent procedures specified by planar technology and the microscopic structural studies. The surface states after chemical etching have been investigated using electron, metallographic and atomic force microscopy. Using X-ray microanalysis, we have monitored the concentrations of the host elements (Pb and Te) and possible contamination with chemical compounds present in the etchants and the solutions used to rinse the samples. It was shown that the surface state is improved after chemical etching.
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References
Bochkin OI et al (1983) Mechanical treatment of semiconductor materials. Vysshaya Shkola Publish, Moscow (in Russian)
Kurnosov VI, Yudin VV (1986) The technology of production of semiconductor devices and integrated microchips. Vysshaya Shkola Publish, Moscow (in Russian)
Malanych GP et al (2013) Chemical–mechanical polishing of single crystals of PbTe and Pb1–xSnxTe solid solutions in H2O2–HBr–ethylene glycol etchants (in Ukrainian). Nauk Visn Chernivtsi Nats Univ Khim 640:72–78
Malanych GP et al (2014) Etching behavior of PbTe and Pb1−xSnxTe crystal surfaces in aqueous H2O2–HBr–tartaric acid solutions. Inorg Mater 50(7):661–666. https://doi.org/10.1134/S0020168514070097
Osipova EV et al (1991) The investigation of damaged layers on the surface of lead telluride single crystals after different methods of cutting (in Russian). Neorg Mater 27(6):1200–1203
Perevoshchikov VA (1995) Processes in chemical–dynamic polishing of semiconductor surfaces (in Russian). Vysokochistye Veshchestva 2:5–29
Pop SS, Sharodi IS (2001) Physical electronics. Euroworld, Lviv (in Ukrainian)
Tomashyk ZF et al (2012) Polishing of PbTe and Pb1−xSnxTe single crystals with H2O2–HBr–ethylene glycol bromine-releasing etchants (in Ukrainian). Voprosy khimii i khim tekhnologii 4:120–125
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Malanych, G.P., Tomashyk, V.M. & Korchovyi, A.A. Formation of nanosized relief on PbTe and Pb1−xSnxTe substrates surface during nonabrasive chemical–mechanical polishing by (H2O2 + HBr + ethylene glycol)/glycerol etchant compositions. Appl Nanosci 10, 4637–4643 (2020). https://doi.org/10.1007/s13204-020-01303-3
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Keywords
- Chemical–mechanical polishing
- Lead telluride
- Solid solutions
- Dissolution rate