Luminescence studies of HgCdTe- and InAsSb-based quantum-well structures
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Results of photoluminescence studies of single-quantum-well HgCdTe-based structures and electroluminescence studies of multiple-quantum-well InAsSb-based structures are reported. HgCdTe structures were grown with molecular beam epitaxy on GaAs substrates. InAsSb-based structures were grown with metal-organic chemical vapor deposition on InAs substrates. The common feature of luminescence spectra of all the structures was the presence of peaks with the energy much larger than that of calculated optical transitions between the first quantization levels for electrons and heavy holes. Possibility of observation of optical transitions between the quantization levels of electrons and first and/or second heavy and light hole levels is discussed in the paper in relation to the specifics of the electronic structure of the materials under consideration.
KeywordsQuantum wells Optical transitions Luminescence Narrow-bandgap semiconductors
The authors should like to thank Drs. N.N. Mikhailov, V.S. Varavin and S.A. Dvoretsky from the Institute of Semiconductor Physics for supplying HgCdTe-based structures, and Drs. S.S. Kizhaev, A.V. Chernyaev and N.D. Stoyanov from Microsensor Technology, LLC, for supplying InAsSb-based structures for this research.
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