Abstract
Diamond has the most extreme properties in mechanical, chemical and physical domain. There are many methods to manufacture synthetic diamond. Diamond layers can be deposited on various materials by many processes. The most robust and preferred method is chemical vapour deposition. A variety of researches have been performed on CVD coatings, and a range of developments has come forth starting from initial publications to the latest results. The process parameters of different CVD techniques have been discussed with technical limitations. Flow rate, applied power, increased pressure and temperature range are important parameters for the deposition of CVD diamond.
Similar content being viewed by others
References
DeVries R C, Annu Rev Mater Sci 17 (1987) 161.
Neuhaus A, Angewandte Chemie 66 (1954) 525.
Angus J C, Diam Relat Mater 49 (2014) 77.
Bridgman P W, Sci Am 193 (1955) 42.
Von Bolton W, Z Elektrochem 17 (1911) 971.
Schmellenmeier H Z, Z Phys Chem DDR 9 (1956) 349.
Lander J J, and Morrison J, Surf Sci 4 (1966) 241.
Angus J C, Will H A, and Stanko W S, J Appl Phys 39 (1968) 2915.
Poferl D J, Gardner N C, and Angus J C, J Appl Phys 44 (1973) 1428.
Lightowlers E C, and Collins A T, Phys Rev A 151 (1966) 685.
Chauhan S P, Angus J C, and Gardner N C, J Appl Phys 47 (1976) 4746.
Forgac J M, and Angus J C, Ind Eng Chem Fundam 18 (1979) 416.
M. K. Murayama, S. Kojima, K. Uchida, “Uniform deposition of diamond films using a flat flame stabilized in the stagnation‐point flow”, J. Appl. Phys. 69 (1991) 7924.M. Murakawa, S. Takeuchi, Surf. Coat. Technol. 54–55 (1992) 403.
Nesladek M, Diam Relat Mater 2 (1993) 357.
Norgard C, and Matthews A, Diam Relat Mater 5 (1996) 332.
Okazaki H, Yoshida R, Muro T, Nakamura T, Wakita T, Muraoka Y, Hirai M, Kato H, Yamasaki S, Takano Y, Ishii S, Oguchi T, and Yokoya T, Appl Phys Lett 98 (2011) 082107.
Okumura Y, Kanayama K, and Shogaki K, Combust Flame 157 (2010) 1052.
Ohtake N, and Yoshikawa M, J Electrochem Soc 137 (1990) 717.
Aleksov A, Vescan A, Kunze M, Gluche P, Ebert W, Kohn E, Bergmaier A, and Dollinger G, Diam Relat Mater 8 (1999) 941.
Almeida F A, Amaral M, Oliveira F J, and Silva R F, Diam Relat Mater 15 (2006) 2029.
Ando Y, Tobe S, Saito T, Sakurai J, Tahara H, and Yoshikawa T, Thin Solid Films 457 (2004) 217.
Ando Y, Tobe S, and Tahara H, Vacuum 83 (2009) 102.
Ashfold M N R, May P W, and Rego C A, Chem Soc Rev 23 (1994) 21.
Bachmann P K, Leers D, and Lydtin H, Diam Relat Mater 1 (1991) 1.
Pleuler E, Wild C, Funer M, and Koidl P, Diam Relat Mater 11 (2002) 467.
Polini R, Barletta M, and Cristofanilli G, Thin Solid Films 519 (2010) 1629.
Prijaya N A, Angus J C, and Bachmann P K, Diam Relat Mater 3 (1994) 129.
Rakha S A, Xintai Z, Zhu D, and Guojun Y, Curr Appl Phys 10 (2010) 171.
Rosenkranz B, and Bettmer J, Trends Anal Chem 19 (2000) 138.
Sawabe A, Yasuda H, Inuzuka T, and Suzuki K, Appl Surf Sci 33–34 (1988) 539.
Schauer S N, Flemish J R, Wittstruck R, Landstrass M I, and Plano M A, Appl Phys Lett 64 (1994) 28.
Schmitt M, and Paulmier D, Tribol Int 37 (2004) 317.
Schafer L, Hofer M, and Kroger R, Thin Solid Films 515 (2006) 1017.
Kee R J, and Miller J A, Phys D 12 (1984) 198.
Sciortino S, Lagomarsino S, Pieralli F, Borchi E, and Galvanetto E, Diam Relat Mater 11 (2002) 573.
Seely J F, and Harris E G, Phys Rev A 7 (1973) 1064.
Shin S D, Hwang N M, and Kim D Y, Diam Relat Mater 11 (2002) 1337.
Kamo M, Sato Y, Matsumoto S, and Setaka N, J Cryst Growth 62 (1983) 642.
Khan M H, Liu H K, Sun X, Yamauchi Y, Bando Y, Golberg D, and Huang Z, Charact Appl 20 (2017) 611.
Esteves L M, Oliveira H A, and Passos F B, J Ind Eng Chem 65 (2018) 1.
Gupta M, Singh V, Kumar S, Kumar S, Dilbaghi N, AND Said Z, J Clean Prod 190 (2018) 169.
Mermoux M, Chang S, Girard H A, and Arnault J-C, Diam Relat Mater 87 (2018) 248.
Liang G, and Mudawar I, Int J Heat Mass Transf 128 (2019) 892.
Khan M H, Liu H K, Sun X, Yamauchi Y, Bando Y, Golberg D, and Huang Z, Mater Today 20 (2017) 611.
Tokunaga T, Ohno M, and Matsuura K, J Mater Sci Technol 34 (2018) 1119.
Zhai W, Srikanth N, Kong L B, and Zhou K, Carbon 119 (2017) 150.
Guo B, Wu M, Zhao Q, Liu H, and Zhang J, Ceram Int 44 (2018) 17333.
Zaitsev A M, Moe K S, and Wang W, Diam Relat Mater 88 (2018) 237.
Silva F, Bonnin X, Scharpf J, and Pasquarelli A, Diam Relat Mater 19 (2010) 397.
Spitsyn B V, Bouilov L L, and Alexenko A E, Braz J Phys 30 (2000) 471.
Suzuki K, Sawabe A, and Inuzuka T, Jpn J Appl Phys 29 (1990) 153.
Tan W, and Grotjohn T A, Diam Relat Mater 4 (1995) 1145.
Tendero C, Tixier C, Tristant P, Desmaison J, and Leprince P, Spectrochim Acta B 61 (2006) 2.
Schwander M, and Partes K, Diam Relat Mater 20 (2011) 1287.
Tsubouchi N, Mokuno Y, Chayahara A, and Shikata S, Diam Relat Mater 19 (2010) 1259.
Tzeng Y, Phillips R, Cutshaw C, Srivinyunon T, Loo B H, and Wang P, Appl Phys Lett 58 (1991) 2645.
Ueda K, and Kasu M, Diam Relat Mater 18 (2009) 121.
Srikanth V V S S, Jiang X, and Kopf A, Surf Coat Technol 204 (2010) 2362.
Din S H, Shah M A, and Sheikh N A, Surf Toporaphy Metrol Prop IOP 5 (2017) 1.
Vollertsen F, Partes K, and Schubnov A, Prod Eng 4 (2010) 9.
Wang Z L, Lu C, Li J J, and Gu C Z, Appl Surf Sci 255 (2009) 9522.
Wang S, Chen G, and Yang F, Thin Solid Films 517 (2009) 3559.
Wang T, Xiang L, Shi W, and Jiang X, Surf Coat Technol 205 (2011) 3027.
Werner M, and Locher R, Rep Prog Phys 61 (1998) 1665.
Xie Z, Zhou Y, He X, Gao Y, Park J, Ling H, Jiang L, and Lu Y, Cryst Growth Des 10 (2010) 1762.
Xie Z Q, He X N, Hu W, Guillemet T, Park J B, Zhou Y S, Bai J, Gao Y, Zeng X C, Jiang L, and Lu Y F, Cryst Growth Des 10 (2010) 4928.
Baik Y J, Lee J K, Lee W S, and Eun K Y, Thin Solid Films 341 (1999) 202.
Bardos L, Barankova H, Lebedev Yu A, Nyberg T, and Berg S, Diam Relat Mater 6 (1997) 224.
Berghaus J O, Meunier J L, and Gitzhofer F, Int J Refract Met Hard Mater 16 (1998) 201.
Berthou H, Faure C, Hanni W, and Perret A, Diam Relat Mater 8 (1999) 636.
Bjorkman H, Rangsten P, and Hjort K, Sens Actuators 78 (1999) 41.
Bundy F P, Hall H T, Strong H M, and Wentorf R H, Nature 176 (1955) 51.
Jonkers J, de Regt J M, van der Mullen J A M, Vos H P C, de Groote F P J, and Timmermans E A H, Spectrochim Acta B 51 (1996) 1385.
Chattopadhyay A, Sarangi S K, Chattopadhyay A K, Appl Surf Sci 255 (2008) 1661.
Chae K W, Baik Y J, Park J K, Lee W S, Diam Relat Mater 19 (2010) 1168.
Chen G C, Li B, Li H, Lan H, Dai F W, Xue Q J, Han X Q, Hei L F, Song J H, Li C M, Tang W Z, and Lu F X, Diam Relat Mater 19 (2010) 1078.
Raghuveer M S, Yoganand S N, Jagannadham K, Lemaster R L, and Bailey J, Wear 253 (2002) 1194.
Levy-Clement C, Ndao N A, Katty A, Bernard M, Deneuville A, Comninellis C, and Fujishima A, Diam Relat Mater 12 (2003) 606.
McConnell M L, Dowling D P, Pope C, Donnelly K, Ryder A G, and OConnor G M, Diam Relat Mater 11 (2002) 1036.
Denysenko I B, Xu S, Long J D, Rutkevych P P, Azarenkov N A, Ostrikov K, J Appl Phys 95 (2004) 2713.
Izak T, Marton M, Varga M, Vojs M, Vesely M, Redhammer R, and Michalka M, Vacuum 84 (2009) 49.
Donnelly K, Dowling D P, McConnell M L, Flood R V, Berkefelt O, and Svennebrink J, Diam Relat Mater 9 (2000) 693.
Donnet J B, Oulanti H, Le Huu T, and Schmitt M, Carbon 44 (2006) 374.
R. J. H. Klein-Douwel, J. J. ter Meulen, J. Appl. Phys. 83 (1998) 4734.
Brandaoa L E V S, Pires R F, and Balzaretti N M, Vib Spectrosc 54 (2010) 84.
Feng Y, Lv J, Liu J, Gao N, Peng H, and Chen Y, Appl Surf Sci 257 (2011) 3433.
Gabler J, and Pleger S, Int J Mach Tools Manuf 50 (2010) 420.
Gao Z, Carabelli V, Carbone E, Colombo E, Demaria F, Dipalo M, Gosso S, Manfredotti C, Pasquarelli A, Rossi S, Xu Y, Vittone E, and Kohn E, Diam Relat Mater 19 (2010) 1021.
Chou Y K, Thompson R G, and Kumar A, Thin Solid Films 518 (2010) 7487.
Hirata A, and Yoshikawa M, Diam Relat Mater 4 (1995) 1363.
Kim N I, Kataoka T, Maruyama S, and Maruta K, Combust Flame 141 (2005) 78.
McKindra T, OKeefe M J, Xie Z, Lu Y, Mater Charact 61 (2010) 661.
Konov V I, Prokhorov A M, Uglov S A, Bolshakov A P, Leontiev I A, Dausinger F, Huegel H, Angstenberger B, Sepold G, and Metev S, Appl Phys A Mater Sci Process 66 (1998) 575.
Hanssen L M, Carrington W A, Butler J E, and Snail K A, Mater Lett 7 (1988) 289.
Hirose Y, Amanuma S, and Komaki K, J Appl Phys 68 (1990) 6401.
Liang Q, Vohra Y K, Thompson R, Diam Relat Mater 17 (2008) 2041.
Lu F X, Zhong G F, Sun J G, Fu Y L, Tang W Z, Wang J J, Li G H, Zang J M, Pan C H, Tang C X, Lo T L, and Zhang Y G, Diam Relat Mater 7 (1998) 737.
Gheeraert E, Koizumi S, Teraji T, Kanda H, and Nesladek M, Diam Relat Mater 9 (2000) 948.
Glumac N G, and Goodwin D G, Thin Solid Films 212 (1992) 122.
Gorokhov E V, Magunov A N, Feshchenko V S, and Altukhov A A, Instrum Exp Tech 51 (2008) 280.
Granger M C, Witek M, Xu J, Wang J, Hupert M, Hanks A, Koppang M D, Butler J E, Lucazeau G, Mermoux M, Strojek J W, Swain G M, Anal Chem 72 (2000) 3793.
Harris S J, Weiner A M, and Perry T A, Appl Phys Lett 53 (1988) 1605.
Hartmann P, Haubner R, and Lux B, Diam Relat Mater 5 (1996) 850.
Zhang H, Lopez-Honorato E, and Xiao P, Carbon 91 (2015) 346.
Liu M, Wen Y, Liu R, Liu B, and Shao Y, Powder Technol 280 (2015) 72.
Liu R, Liu M, Liu JC, Shao Y, and Liu B, J Nucl Mater 467 (2015) 917.
Kim Y, Kim H U, Shin Y, Kang S, and Kim T, J Mech Sci Technol 28 (2014) 4693.
Author information
Authors and Affiliations
Corresponding author
Rights and permissions
About this article
Cite this article
Din, S.H., Shah, M.A., Sheikh, N.A. et al. CVD Diamond. Trans Indian Inst Met 72, 1–9 (2019). https://doi.org/10.1007/s12666-018-1454-1
Received:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1007/s12666-018-1454-1