Abstract
Lithium (3 wt%) doped V2O5 thin film of thickness 97 nm was spray deposited over an ITO coated glass substrate at 450 °C. The deposited film was irradiated with 200 MeV Ag15+ swift heavy ions (SHI) at a fluence of 5 × 1012 ions/cm2. X-ray diffraction reveals the pristine and irradiated films to have an orthorhombic phase. The SHI irradiation induced thermal spike lead to texturing along the (400) direction along with partial amorphization. The 394 cm−1 O–V–O Raman bending deformation is suppressed due to SHI irradiation induced oxygen vacancies. Optical transparency decreased from 80 to 50 % and the direct and indirect band gaps showed red shift upon SHI irradiation. Hall effect study revealed marginal variation in transport parameters upon SHI irradiation. The results are discussed.
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References
Granqvist C G, Handbook of Inorganic Electrochromic Materials, Elsevier, Amsterdam (1995).
Monk P M S, and Mortimer R J , Rosseinsky D R, Electrochromism: Fundamentals and Applications, VCH, Weinheim (1995).
Pecquenard B, Gourier D, and Baffier N, Solid State Ionics 78 (1995) 287–303.
Cocciantelli J M, Menetrier M, Delmas C, Doumerc J P, Pouchard M, and Hagenmuller P, Solid State Ionics, 50 (1992) 99–105.
Cocciantelli J M, Doumerc J P, Pouchard M, Brouselly M, and Labat J, J Power Sources, 34 (1991) 103–111.
Rath H, Dash P, Som T, Jai Prakash, Tripathi A, Avasthi D K, Singh U P, and Mishra N C, Radiat Eff Defects in solids, 166 (2011) 571–577.
Izui K, J Phys So Jpn, 20 (1965) 915–932.
Mishra N C, Radiat Eff Defects Solids, 166 (2011) 657–665.
Kovendhan M, Paul Joseph D, Manimuthu P, Ganesan S, Maruthamuthu P, Suthanthiraraj S A, Venkateswaran C, Mohan R, in Proceedings of the 54th DAE Solid State Physics Symposium (2009) 603–604.
Berthelot A, Hemon S, Gourbilleau F, Dufour C, Domenges B, and Paumier E, Phil Mag A 80 (2000) 2257–2281.
Chaudhary Y S, Khan S A, Shrivastav R, Satsangi V R, Prakash S, Avasthi D K, and Dass S, Nucl Instr Meth B 225 (2004) 291–296.
Popovic Z V, Stergiou V, Raptis Y S, Konstantinovic M J, Isobe M, Ueda Y, and Moshchalkov V V, J Phys 14 (2002) L583–L589.
Reddy Channu V S, Rudolf Holze, Rambabu B, Kalluru R R, Williams Q L, and Wen C, Int J Electrochem Sci, 5 (2010) 605–614.
Hemon S, Berthelot A, Durfour C, Domenges B, and Paumier E, Nucl Instrum Methods Phys Res Sect B, 166–167, (2000) 927–932.
Tauc J, Amorphous and Liquid Semiconductor, Plenum Press, New York (1974).
Fouran Singh, Singh R G, Vinod Kumar, Khan S A, and Pivin J C, J Appl Phys 110 (2011) 083520–25.
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The author MK thanks the Inter University Accelerator Centre, New Delhi, for access to the irradiation facility. The authors MK and PM thank the council of scientific and industrial research, Govt. of India for the award of senior research fellowship (2012).
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Kovendhan, M., Paul Joseph, D., Manimuthu, P. et al. Comparison of Properties of Pristine and 200 MeV Ag15+ Ions Irradiated ‘Li’ 3 wt% Doped V2O5 Thin Films. Trans Indian Inst Met 66, 353–356 (2013). https://doi.org/10.1007/s12666-013-0282-6
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DOI: https://doi.org/10.1007/s12666-013-0282-6