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A theoretical calculation of atomic parameters for the transitions of Si II

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Abstract

Energy levels, wavelengths, transition probabilities, oscillator strengths and line strengths of transitions between computed levels are reported for Si II by using the multiconfiguration Dirac–Hartree–Fock method. The contributions of Breit interaction and quantum electrodynamics correction are taken into consideration. Comprehensive comparisons are made with available experimental and theoretical values, and the accuracy of the present results is assessed to be better than that of other values, which is much closer to the experimental values. The atomic structure parameters of some higher excited states that have no other theoretical values are also calculated and listed in this paper. We came to the conclusion that the contributions of Breit interaction and quantum electrodynamics correction cannot be ignored for high-precision excitation and transition energy calculations.

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Acknowledgements

The authors wish to thank P. Jönsson for providing the GRASP2K package for free. This work was supported by the Natural Science Foundation of Anhui Province of China (Grant nos. KJ2018A0588, KJ2019A0879) and the Natural Science Foundation of the Jiangsu Higher Education Institutions of China (Grant no. 17KJB140025).

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Authors and Affiliations

  1. Anhui Xinhua University, Hefei, 230088, Anhui, People’s Republic of China

    Miao Wu

  2. Shanghai EBIT Laboratory, Institute of Modern Physics, and Key Laboratory of Nuclear Physics and Ion-beam Application (MOE), Fudan University, Shanghai, 200433, People’s Republic of China

    Zhencen He

  3. School of Mathematic and Physical Science, Xuzhou University of Technology, Xuzhou, 221111, Jiangsu, People’s Republic of China

    Feng Hu

  4. Institute of Atomic and Molecular Physics, Sichuan University, Chengdu, 610065, People’s Republic of China

    Xiangfu Li

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  1. Miao Wu
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  2. Zhencen He
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Correspondence to Miao Wu.

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Wu, M., He, Z., Hu, F. et al. A theoretical calculation of atomic parameters for the transitions of Si II. Indian J Phys 95, 807–813 (2021). https://doi.org/10.1007/s12648-020-01771-x

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