Incorporation of polyvinyl alcohol into ZrO2 to modulate the hysteresis-type current–voltage characteristics of Au/ZrO2/heavily doped p-type Si devices

Abstract

This study determines the effect of incorporating polyvinyl alcohol (PVA) into ZrO2 (PVA:ZrO2) on the hysteresis-type current–voltage characteristics of Au/ZrO2/heavily doped p-type Si (p+-Si) devices. In order to determine the correlation between morphology and performance, the Au/ZrO2/p+-Si and Au/PVA:ZrO2/p+-Si devices are fabricated and their current–voltage characteristics are determined. These devices exhibit hysteresis. Incorporating PVA into ZrO2 induces a strong steric effect, which results in the elimination of crystallographic defects in the ZrO2 films and an improvement in the hysteresis characteristics for Au/PVA:ZrO2/p+-Si devices. Incorporating PVA into ZrO2 modulates hysteresis in Au/ZrO2/p+-Si devices.

This is a preview of subscription content, log in to check access.

Fig. 1
Fig. 2
Fig. 3
Fig. 4
Fig. 5
Fig. 6

References

  1. [1]

    S Chatterjee, S K Samanta, H D Banerjee and C K Maiti Electron. Lett.37 390 (2001)

    ADS  Article  Google Scholar 

  2. [2]

    M Copel, M Gribelyuk and E Gusev Appl. Phys. Lett.76 436 (2000)

    ADS  Article  Google Scholar 

  3. [3]

    C C Lin, Y P Chang, H B Lin and C H Lin Nanoscale Research Letters7 187 (2012)

    ADS  Article  Google Scholar 

  4. [4]

    V Chauhan, R Gupta, V Kumar, J Ram, F Singh, M Prasad, S Kumar, S Ojha, P A Alvi, R Mehra and R Kumar Ceramics International45 18887 (2019)

    Article  Google Scholar 

  5. [5]

    X Dong, G Xia, Q Zhang, L Li, H Gong, J Bi and S Wang Ceramics International43 15205 (2017)

    Article  Google Scholar 

  6. [6]

    D Lee, H Choi, H Sim, D Choi, H Hwang, M J Lee, S A Seo and I K Yoo IEEE Electron Device Lett.26 719 (2005)

    ADS  Article  Google Scholar 

  7. [7]

    D C Hsu, I Y Chang, M T Wang, P C Juan, Y L Wang and J Y Lee Appl. Phys. Lett.92 202901 (2008)

    ADS  Article  Google Scholar 

  8. [8]

    Y Ohya, T Kume and T Ban Jpn. J. Appl. Phys.44 1919 (2005)

    ADS  Article  Google Scholar 

  9. [9]

    J M Kim, J W Lee, J K Kim, B K Ju, J S Kim, Y H Lee and M H Oh Appl. Phys. Lett.85 6368 (2004)

    ADS  Article  Google Scholar 

  10. [10]

    A Salaün, H Grampeix, J Buckley, C Mannequin, C Vallée, P Gonon, S Jeannot, C Gaumer, M Gros-Jean and V Jousseaume Thin Solid Films525 20 (2012)

    ADS  Article  Google Scholar 

  11. [11]

    Q Liu, W Guan, S Long, R Jia and M Liu Appl. Phys. Lett.92 012117 (2008)

    ADS  Article  Google Scholar 

  12. [12]

    Q Liu, S Long, W Guan, S Zhang, M Liu and J Chen Journal of Semiconductors30 042001 (2009)

    Article  Google Scholar 

  13. [13]

    M T Soo, N Prastomo, A Matsuda, G Kawamura, H Muto, A F M Noor, Z Lockman and K Y Cheong Appl. Surf. Sci.258 5250 (2012)

    ADS  Article  Google Scholar 

  14. [14]

    M H Boratto, M Congiu, S B O dos Santos and L V A Scalvi Ceramics International44 10790 (2018)

    Article  Google Scholar 

  15. [15]

    Y Dora, S Han, D Klenov, P J Hansen, K No, U K Mishra, S Stemmer and J S Speck J. Vac. Sci. Technol. B Microelectron. Nanometer. Struct.24 575 (2006)

    ADS  Article  Google Scholar 

  16. [16]

    V M Ievlev, K A Solntsev, A A Sinel’nikov, S A Soldatenko and A M Vozgor’kov Inorganic Materials47 402 (2011)

    Article  Google Scholar 

  17. [17]

    Q Zhang, X Li, J Shen, G Wu, J Wang and L Chen Materials Letters45 311 (2000)

    Article  Google Scholar 

  18. [18]

    C Shao, H Guan, Y Liu, J Gong, N Yu and X Yang J. Crystal Growth267 380 (2004)

    ADS  Article  Google Scholar 

  19. [19]

    S Sunwoo, J H Kim, K G Lee and H Kim J. Mater. Sci.35 3677 (2007)

    ADS  Article  Google Scholar 

  20. [20]

    N T B Linh, K H Lee and B T Lee J. Mater. Sci. 46 5615 (2011)

    ADS  Article  Google Scholar 

  21. [21]

    F R Lamastra, A Bianco, A Meriggi, G Montesperelli, F Nanni and G Gusmano Chemical Engineering Journal 145 169 (2008)

    Article  Google Scholar 

  22. [22]

    M H Boratto, R A Ramos Jr., M Congiu, C F O Graeff and LV A Scalvi Applied Surface Science410 278 (2017)

    ADS  Article  Google Scholar 

  23. [23]

    W C Liu, D Wu, A D Li, H Q Ling, Y F Tang and N B Ming Appl. Surf. Sci.191 181 (2002)

    ADS  Article  Google Scholar 

  24. [24]

    A Hardy, S Van Elshocht, C Adelmann, T Conard, A Franquet, O Douhéret, I Haeldermans, J D’Haen, S De Gendt, M Caymax, M Heyns, M D’Olieslaeger, M K Van Bael and J Mullens Thin Solid Films516 8343 (2008)

    ADS  Article  Google Scholar 

  25. [25]

    J Davies and J G P Binner Journal of the European Ceramic Society20 1539 (2000)

    Article  Google Scholar 

  26. [26]

    S Croll Progress in Organic Coatings44 131 (2002)

    Article  Google Scholar 

  27. [27]

    Y J Lin and J F Yu J. Non-Crystalline Solids426 132 (2015)

    ADS  Article  Google Scholar 

  28. [28]

    A Christensen and E A Carter Phys. Rev. B58 8050 (1998)

    ADS  Article  Google Scholar 

  29. [29]

    W Wang, F Hou, J Liu and H Guo Electroplating & Pollution Control24 9 (2004)

    Google Scholar 

  30. [30]

    R H French, S J Glass, F S Ohuchi, Y N Xu and W Y Ching Phys. Rev. B49 5133 (1994)

    ADS  Article  Google Scholar 

  31. [31]

    C R Aita, E E Hoppe and R S Sorbello Appl. Phys. Lett.82 677 (2003)

    ADS  Article  Google Scholar 

  32. [32]

    Z Wang, B Yang, Z Fu, W Dong, Y Yang and W Liu Appl. Phys. A81 691 (2005)

    ADS  Article  Google Scholar 

  33. [33]

    A Emeline, V G Kataeva and A S Litke Langmuir14 5011 (1998)

    Article  Google Scholar 

  34. [34]

    L Chua Semicond. Sci. Technol.29 104001 (2014)

    ADS  Article  Google Scholar 

  35. [35]

    Y J Lin, W C Chen, Y M Chin and C J Liu J. Phys. D: Appl. Phys.42 045419 (2009)

    ADS  Article  Google Scholar 

  36. [36]

    D Panda and T Y Tseng Thin Solid Films531 1 (2013)

    ADS  Article  Google Scholar 

  37. [37]

    M A Lampert and P Mark Current Injection in Solids (New York: Academic) (1970)

    Google Scholar 

  38. [38]

    J Zhang, H Yang, Q Zhang, H Jiang, J Luo, J Zhou and S Dong Appl. Phys. A116 663 (2014)

    ADS  Article  Google Scholar 

  39. [39]

    H Y Jeong, S K Kim, J Y Lee and S Y Choi Appl. Phys. A102 967 (2011)

    ADS  Article  Google Scholar 

Download references

Acknowledgements

The authors acknowledge the support of the Ministry of Science and Technology, Taiwan (Contract Nos. 106-2112-M-018-001-MY3, 103-2112-M-018-003-MY3 and 100-2112-M-018-003-MY3) in the form of grants.

Author information

Affiliations

Authors

Corresponding author

Correspondence to Yow-Jon Lin.

Additional information

Publisher's Note

Springer Nature remains neutral with regard to jurisdictional claims in published maps and institutional affiliations.

Rights and permissions

Reprints and Permissions

About this article

Verify currency and authenticity via CrossMark

Cite this article

Yu, J., Lin, Y., Lin, M. et al. Incorporation of polyvinyl alcohol into ZrO2 to modulate the hysteresis-type current–voltage characteristics of Au/ZrO2/heavily doped p-type Si devices. Indian J Phys (2020). https://doi.org/10.1007/s12648-020-01764-w

Download citation

Keywords

  • Thin films
  • Hysteresis
  • Point defects
  • Oxides
  • Polymer

PACS Nos.

  • 73.50.−h
  • 77.55.+f
  • 77.84.Bw
  • 71.20.Rv