Effects of graphene content on resistive switching for Au/poly(methyl methacrylate): reduced graphene oxide/heavily doped p-type Si devices


This study determines the effect of incorporating reduced graphene oxide (RGO) nanosheets into poly(methyl methacrylate) (PMMA) on the resistive switching (RS) mechanisms by measuring the current–voltage characteristics for Au/PMMA/heavily doped p-type Si (p+-Si) and Au/PMMA:RGO/p+-Si devices. The effect of RGO content on the RS properties is also determined. The Au/PMMA/p+-Si device exhibits set/reset–free current–voltage characteristics because of the insulating properties of PMMA. However, the Au/PMMA:RGO/p+-Si device exhibits RS behavior. Incorporating RGO into PMMA results in an increase in conductivity, the formation of PMMA–RGO interfaces and a significant increase in the trap density at the PMMA/RGO interfaces, so the RS performance is improved for Au/PMMA:RGO/p+-Si devices. It is shown that the current density for Au/PMMA:RGO/p+-Si devices is limited by the combined effect of ohmic conduction, space-charge-limited current conduction and trap-filled limited current conduction. An excess amount of RGO in PMMA does not result in any memory effect during the forward- and reverse-biased sweeps because there is a significant increase in the conductivity of PMMA:RGO film.

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The authors acknowledge the support of the Ministry of Science and Technology, Taiwan (Contract No. 106-2112-M-018-001-MY3) in the form of grants.

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Correspondence to Yow-Jon Lin.

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Lin, Y., Wu, C., Ke, Z. et al. Effects of graphene content on resistive switching for Au/poly(methyl methacrylate): reduced graphene oxide/heavily doped p-type Si devices. Indian J Phys 94, 1209–1214 (2020). https://doi.org/10.1007/s12648-019-01568-7

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  • Polymer
  • Electrical properties
  • Si
  • Thin films
  • Resistive switching
  • Two-dimensional materials


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