Abstract
The structural, elastic, dynamical and thermodynamic properties of CdXP2 (X = Si, Ge) with chalcopyrite semiconductors have been calculated by using the projector augmented wave method within the generalized gradient approximation. The obtained lattice constants and elastic constants of CdXP2 (X = Si, Ge) are compared with the available experimental and other theoretical results, and the agreements between them are quite well. Also, the elastic anisotropy of CdXP2 (X = Si, Ge) have been evaluated. In addition, the phonon dispersion curves and the corresponding phonon density of states of CdXP2 (X = Si, Ge) have been determined by virtue of a linear response approach to density functional perturbation theory method successfully. Finally, the Helmholtz free energy F, internal energy E, entropy S and the constant volume specific heat C V have also been predicted based on quasi-harmonic approximation.
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Acknowledgements
This project was supported by the Natural Science Foundation of China (Grant Nos. 51402251, 51502259 and 51603179), This work was supported by the joint research fund between Collaborative Innovation Center for Ecological Building Materials and Environmental Protection Equipments and Key Laboratory for Advanced Technology in Environmental Protection of Jiangsu Province (GX2015305). Natural Science Foundation of the Higher Education Institutions of Jiangsu Province (Grant No. 14KJD430003). This work was supported by the science and technology project from Ministry of Housing and Urban–Rural Development of the People’s Republic of China (2015-K4-007). This work was supported by prospective research projects in Jiangsu Province (BY2016065-26).
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Hou, H.J., Zhu, H.J., Li, S.P. et al. Structural, dynamical and thermodynamic properties of CdXP2 (X = Si, Ge) from first principles. Indian J Phys 92, 315–323 (2018). https://doi.org/10.1007/s12648-017-1109-9
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DOI: https://doi.org/10.1007/s12648-017-1109-9