Preparation and Characterization of Transparent Semiconducting Silica Nanocomposites Doped with P2O5 and Al2O3


A silicate (SiO2) doped with two different dopants P2O5 and Al2O3 were prepared using a direct sol-gel method and calcined at 400 °C. XRD and FTIR spectra of films were measured. The addition of dopant and their ability to eliminate (OH−) groups affected the examined features of doped silica films. The optical results for SiO2, 4Al2O3:6SiO2, and 4P2O5:6SiO2 reveal that the dopant type has explicit influences on the high transparency silica film and their optical properties. The index of refraction (n), absorption coefficient (α), and the relative permittivity (dielectric constant (ε)) were concluded using evaluations of the reflectance and transmittance spectra.

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The work was not financially supported, and the National Research Centre of Egypt facilitates the work and the characterization tools.

Author Contribution Statement

Amany Mohamed El Nahrawy: Conceived and designed the experiments; Analyzed and interpreted the data; Contributed reagents, materials, analysis tools or data; Wrote the paper.

A.M. Mansour and Ali B. Abou Hammad: Analyzed and interpreted the data; Contributed reagents, materials, analysis tools or data; Wrote the paper.


Authors declare that this article has not any supported and the authors completely supported their article.

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Correspondence to Ali B. Abou Hammad.

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El Nahrawy, A.M., Abou Hammad, A.B. & Mansour, A.M. Preparation and Characterization of Transparent Semiconducting Silica Nanocomposites Doped with P2O5 and Al2O3. Silicon (2021).

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  • Transparent semiconducting
  • Nanocomposites
  • Sol-gel
  • Silica
  • P2O5, Al2O3