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Improved Drive Capability of Silicon Nano Tube Tunnel FET Using Halo Implantation

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Abstract

In this paper, we focus on the improvement of comprehensive device performance of Silicon Nanotube Tunnel Field Effect Transistor (NT_TFET) for ultra low power applications. In the design we have implanted 2nm Halo region at the source side of Si NT_TFET for improving the subthreshold swing and short channel effects (SCEs). To prove the concept, the performance of Silicon Nanowire tunnel FET (NW_TFET), Silicon Nanotube TFET without Halo (NT_TFET) and Silicon Nanotube TFET with halo (NT_FET_HALO) implant are compared. The impact of halo doping profile on the Subthreshold swing, ON and OFF current are investigated. Further, the degradation of OFF state current due to Halo doping is controlled by lightly doped drain.

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Acknowledgments

The authors would like to thank the Department of Electrical Engineering, NIT Silchar, for their valuable support in carrying out this research work.

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Authors and Affiliations

  1. Department of Electronics and Comm. Engg., C.V. Raman College of Engineering, Bhubneshwar, India

    Avtar Singh

  2. Department of Electrical Engg., National Institute of Technology, Silchar, India

    Saurabh Chaudhary

  3. Department of Electronics and Comm. Engg., DVR & Dr. HS MIC College of Technology, Andhra Pradesh, India

    Savitesh Madhulika Sharma

  4. Electronics and Telecommunication Engg. Dept., Jadavpur University, Kolkata, India

    C. K. Sarkar

Authors
  1. Avtar Singh
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  2. Saurabh Chaudhary
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  3. Savitesh Madhulika Sharma
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  4. C. K. Sarkar
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Correspondence to Savitesh Madhulika Sharma.

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Singh, A., Chaudhary, S., Sharma, S.M. et al. Improved Drive Capability of Silicon Nano Tube Tunnel FET Using Halo Implantation. Silicon 12, 2555–2561 (2020). https://doi.org/10.1007/s12633-019-00350-y

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  • DOI: https://doi.org/10.1007/s12633-019-00350-y

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