The mechanical properties of Czochralski (Cz) silicon wafers dictate fundamental limits on the fabrication of diverse electronic devices. Certain impurities with sufficiently high concentrations may affect the mechanical properties of Cz silicon. The underlying mechanisms for such influences have been being explored in the past decades. In this work, the effects of antimony (Sb)- and tin (Sn)-doping at 1018 cm−3 level on the mechanical properties of Czochralski (Cz) silicon have been comparatively investigated. Since Sb and Sn have quite close tetrahedral covalent radii in silicon, the lattice strains resulted from Sb- and Sn-doping and their consequent effects on the mechanical properties of silicon are approximately identical. In silicon, Sb is an electrically active impurity while Sn is a neutral one. Therefore, the present work can essentially reveal the role of electrical activity of Sb playing in the mechanical properties of Cz silicon. It is found that Sb-doped Cz (Sb-Cz) silicon possesses a slightly higher hardness than Sn-doped Cz (Sn-Cz) silicon. Moreover, the dislocation gliding at 500 or 600 °C in Sb-Cz silicon requires a much larger critical resolved shear stress than that in Sn-Cz silicon. At such two temperatures, Sb-Cz silicon remains to be n-type in electrical conduction. The aforementioned two results are believed to be ascribed to the resistance of dislocation motion by the Coulomb interaction between the positively charged Sb ions and the dislocations that are deep-level acceptors thus being negatively charged in Sb-Cz silicon. As the temperature is increased to 700 °C and above, the dislocation gliding in Sb-Cz silicon is not substantially different from that in Sn-Cz silicon. At such elevated temperatures, Sb-Cz silicon becomes intrinsic in electrical conduction like Sn-Cz silicon. In this context, there is no Coulomb interaction between Sb ions and dislocations anymore to impede the dislocation gliding in Sb-Cz silicon. In addition, it is found that the indentation fracture toughness of Sb-Cz is almost the same as that of Sn-Cz silicon. Actually, the fracture of silicon is essentially a cleavage process, to which the electrical activity of Sb is irrelevant.
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Hu SM, Patrick WJ (1975) Effect of oxygen on dislocation movement in silicon. J Appl Phys 46(5):1869–1874
Zeng Z, Ma X, Chen J, Yang D, Ratschinski I, Hevroth F, Leipner HS (2010) Effect of oxygen precipitates on dislocation motion in Czochralski silicon. J Cryst Growth 312(2):169–173
Senkader S, Jurkschat K, Gambaro D, Falster RJ, Wilshaw PR (2001) On the locking of dislocations by oxygen in silicon. Philosophical Magazine A 3(81):759–775
Fukuda T, Ohsawa A (1992) Mechanical strength of silicon crystals with oxygen and/or germanium impurities. Appl Phys Lett 60(10):1184–1186
Yonenaga I (2001) Dislocation behavior in heavily impurity doped Si. Scr Mater 45(11):1267–1272
Siethoff H, Brion HG (2003) The interaction of boron and phosphorus with dislocations in silicon. Mater Sci Eng A 355(1–2):311–314
Ohno Y, Shirakawa T, Taishi T, Yonenaga I (2009) Interaction of phosphorus with dislocations in heavily phosphorus doped silicon. Appl Phys Lett 95(9):91915
Yonenaga I, Taishi T, Huang X, Hoshikawa K (2003) Dynamic characteristics of dislocations in Ge-doped and (Ge+B) codoped silicon. J Appl Phys 93(1):265–269
Anstis GR, Chantikul P, Lawn BR, Marshall DB (1981) A critical evaluation of indentation techniques for measuring fracture toughness: I, direct crack measurements. J Am Ceram Soc 64(9):533–5389
Cook RF (2006) Strength and sharp contact fracture of silicon. J Mater Sci 41(3):841–872
Kailer A, Gogotsi YG, Nickel KG (1997) Phase transformations of silicon caused by contact loading. J Appl Phys 81(7):3057–3306
Robert H (1999) Properties of crystalline silicon, vol 11. INSPEC, London, pp 653–658
Patel JR, Freeland PE (1967) Change of dislocation velocity with Fermi level in silicon. Phys Rev Lett 18(20):833–835
Schröter W, Labusch R, Haasen P (1977) Comment on “electronic effects on dislocation velocities in heavily doped silicon”. Phys Rev B 15(8):4121–4123
Chen X, Hutchinson JW, Evans AG (2005) The mechanics of indentation induced lateral cracking. J Am Ceram Soc 88(5):1233–123812
Swadener JG, Baskes MI, Nastasi M (2002) Molecular dynamics simulation of brittle fracture in silicon. Phys Rev Lett 89(8):85503
Sueoka K, Kamiyama E, Vanhellemont J (2013) Density functional theory study on the impact of heavy doping on Si intrinsic point defect properties and implications for single crystal growth from a melt. J Appl Phys 114(15):153510
Imai M, Sumino K (1983) “In situ” X-ray topographic study of the dislocation mobility in high-purity and impurity-doped silicon crystals. Philosophical Magazine A 47(4):599
K T, Faber KJM (1992) The mechanical properties of semiconductors. Academic Press, San Diego
Robert H (1999) Properties of crystalline silicon, vol 3. INSPEC, London, p 119
Jones R (1980) The structure of kinks on the 90° partial in silicon and a ‘strained-bond model’ for dislocation motion. Philos Mag B 42(2):213–219
Hirsch P (1979) Recent results on the structure of dislocations in tetrahedrally coordinated semiconductors. J Phys Colloq 40(C6):27–32
Hu SM (1975) On indentation dislocation rosettes in silicon. J Appl Phys 46(4):1470–1472
This work is supported by National Natural Science Foundation of China (Nos. 61674126, 51532007 and 61721005).
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Lan, W., Sun, Y., Zhao, T. et al. Effects of Antimony- and Tin-Doping on the Mechanical Propertiesof Czochralski Silicon: Revealing the Role of Electrical Activity of Antimony. Silicon 12, 1433–1439 (2020). https://doi.org/10.1007/s12633-019-00240-3
- Electrical activity
- Mechanical property
- Czochralski silicon