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A Two Dimensional Analytical Model of Heterostructure Double Gate with Pocket Doped Tunnel FET

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Abstract

This study presents a 2-D analytical surface potential model is advanced by derived the expression from the 2-D Poisson’s equation of heterostructure double gate tunnel FET with channel-source junction-pocket doped. The dual benefits of heterostructure and channel-source junction -pocket doping are incorporated in a single device. In addition, to the surface potential, we calculated the electric field and then the expression is obtained by integrating the tunneling region. The analytical model adequate calculates the channel surface potential and predicts the electric field of a proposed structure. We also examine the necessity of the surface potential on the structure constraints by varying the gate bias, gate dielectric thickness, channel-source junction pocket doping concentration, length of pocket doping. To confirm analytical consequences, we have also simulated the proposed device using Silvaco T-CAD Simulator. Moreover, the drain current, output characteristics and, ON-current with different dielectric and, doping concentration of the proposed device has been considerably observed using a simulator.

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Authors and Affiliations

  1. Department of Electronics and Communication Engineering, Vardhaman college of Engineering, Hyderabad, 501 218, Telangana, India

    Krishna Dharavath

  2. Department of Electrical and Electronics Engineering, Marri Laxman Reddy Institute of Technology and Management Dundigal, Hyderabad, 500 043, Telangana, India

    Adla Vinod

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  1. Krishna Dharavath
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  2. Adla Vinod
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Correspondence to Adla Vinod.

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Dharavath, K., Vinod, A. A Two Dimensional Analytical Model of Heterostructure Double Gate with Pocket Doped Tunnel FET. Silicon 12, 1391–1397 (2020). https://doi.org/10.1007/s12633-019-00232-3

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  • DOI: https://doi.org/10.1007/s12633-019-00232-3

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