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Effect of Al Ratio on Photoluminescence and Raman Scattering of InAlAs/AlGaAs Quantum Dots

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Abstract

We report Raman scattering experiments and aluminum (Al) ratio on self-assembled InAlAs quantum dots (QDs) in AlGaAs matrix with different coverage thickness and growth time. The Raman feature assigned to LO phonons in the dots, exhibit a downward frequency shift compared to the one of InAs/AlGaAs QDs. This shift is caused by the strain effects. It is also found that the Al intermixing from the barrier towards the QDs is more important in InAlAs/AlGaAs than in InAs/AlGaAs QDs. We have found that the decrease of the coverage thickness and growth time of the InAlAs/AlGaAs QDs leads to broadening of the Raman peak assigned to LO phonons. This result is attributed to the increase of the In concentration fluctuation in the QDs. In the second part of this report we have investigated the effect of aluminum (Al) concentration on size of In1−xAlxAs/Al0.3Ga0.7As QDs (x=0.28, 0.38, 0.5) by photoluminescence measurements.

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Authors and Affiliations

  1. Laboratoire des Nanomatériaux et des Systèmes pour les Energies Renouvelables du Centre de Recherches et Technologies de l’Energie Technopole Borj Cedria, BP 95, 2050, Hammam Lif., Tunisie

    A. Sahli

  2. Laboratoire de Recherche Matériaux-Molécules et Applications, Institut Préparatoire aux Etudes Scientifiques et Techniques, La Marsa 2070, Université de Carthage, Carthage, Tunisie

    H. Helali, A. Melliti & M. A. Maaref

  3. Unité de recherche de Spectroscopie Raman, Faculté des Sciences de Tunis, Université de Tunis El Manar, Tunis, Tunisie

    A. Moadhen & M. Oueslati

  4. Laboratoire de Photonique et Nanostructures, CNRS, UPR 20, Route de Nozay, Marcoussis, F-91460, France

    A. Lemaître

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  1. A. Sahli
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  2. H. Helali
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  3. A. Melliti
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  4. A. Moadhen
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  5. M. A. Maaref
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  6. M. Oueslati
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  7. A. Lemaître
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Correspondence to A. Sahli.

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Sahli, A., Helali, H., Melliti, A. et al. Effect of Al Ratio on Photoluminescence and Raman Scattering of InAlAs/AlGaAs Quantum Dots. Silicon 11, 2471–2474 (2019). https://doi.org/10.1007/s12633-018-9987-9

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  • DOI: https://doi.org/10.1007/s12633-018-9987-9

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