, Volume 11, Issue 1, pp 137–143 | Cite as

Effect of Annealing Temperature on Structural and Electrical Properties of Al/ZrO2/p-Si MIS Schottky Diodes

  • K. Sasikumar
  • R. BharathikannanEmail author
  • M. Raja
Original Paper


The structural and electrical properties of Al/ZrO2/p-Si Schottky barrier diodes (SBDs) have been investigated at different annealing temperatures (300, 400, 500 and 600 °C). X-ray diffraction (XRD) analysis shows that the film annealed at 600 °C exhibits better crystalline nature with monoclinic phase. X-ray photoelectron spectroscopy (XPS) analysis reveals that the oxidation state of ZrO2 film is Zr4+. The scanning electron microscopy (SEM) image shows that the film annealed at 600 °C exhibits sub-micro-sized and square-shaped grains. The thermionic emission (TE) model determines the diode parameters such as barrier height (ΦB), ideality factor (n), series resistance (Rs) and saturation current density (Js) from JV characteristics and Cheung’s method. The ideality factor of the Al/ZrO2/p-Si diodes decreases (3.772–3.442) with increasing annealing temperature (300–600 °C).


XRD analysis JV characteristics Barrier height Insulating layer ZrO2 


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The authors are grateful to the Department of Science and Technology-FIST, Project No.: SR/FST/COLLEGE-154/2013 for providing instrument facilities at Sri Ramakrishna Engineering College, Coimbatore, India.


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Copyright information

© Springer Nature B.V. 2018

Authors and Affiliations

  1. 1.Department of PhysicsSri Ramakrishna Engineering CollegeCoimbatoreIndia
  2. 2.Department of PhysicsSri Ramakrishna Mission Vidyalaya College of Arts and ScienceCoimbatoreIndia
  3. 3.Department of PhysicsRVS College of Engineering and TechnologyCoimbatoreIndia

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