, Volume 11, Issue 1, pp 159–164 | Cite as

Influence of Ta2O5 Interfacial Oxide Layer Thickness on Electronic Parameters of Al/Ta2O5/p-Si/Al Heterostructure

  • N. Nanda Kumar ReddyEmail author
  • Harish Sharma AkkeraEmail author
  • M. Chandra Sekhar
  • S. Uthanna
Original Paper


We describe the impact of Ta2O5 interfacial oxide layer thickness (ranging from 100-350 nm) on electrical and structural properties of Al/Ta2O5/p-Si/Al Metal-Insulator-Semiconductor (MIS) Schottky barrier diodes using RF magnetron sputtering. We studied the Schottky barrier device parameters such as ideality factor, barrier height and series resistance and are evaluated from current-voltage (I-V) measurements. The barrier height and ideality factor values are significantly varying with Ta2O5 oxide layer thickness and found to be 0.58 eV, 2.35, 0.71 eV, 2.10 and 0.78 eV, 1.87 for 20, 40 and 60 nm, respectively. It was noticed that the calculated barrier height and ideality values for this prepared Al/Ta2O5/p-Si/Al MIS Schottky barrier diode were greatly improved than those conventional metal-semiconductor (MS) Schottky diodes. The XRD studies revealed that the 100-nm thickness film exhibited poor crystallinity whereas 200 and 350 nm thickness films showed improved crystallinity with orthorhombic phase of β-Ta2O5. The presence of this orthorhombic phase of β-Ta2O5 is confirmed with FTIR studies. To explore the structural transformations in Ta2O5 films with varying thicknesses, Raman spectroscopy was utilized. In addition, the improvement in Schottky diode parameters was correlated with the enhanced crystallinity noticed in XRD studies.


MIS structure RF magnetron sputtering Tantalum pentoxide Schottky barrier height Ideality factor 


Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.



One of the authors Dr. N. Nanda Kumar Reddy thankfully acknowledges the Management of Madanapalle Institute of Technology and Science (MITS, Madanapalle, A.P, India) and DST-FIST-2015 (SR/FST/College-263) Program for providing the financial support and Dr. S. Uthanna is thankful to the University Grants Commission, New Delhi, India for award of UGC-BSR Faculty Fellowship.


  1. 1.
    Bestas AN, Yazici S, Aktas F, Abay B (2014) Appl Surf Sci 318:280CrossRefGoogle Scholar
  2. 2.
    Aydin ME, Yakuphanoglu F, Eom JH, Hwang DH (2007) Physica B 387:239CrossRefGoogle Scholar
  3. 3.
    VanTuyl RL, Liechti CA (1974) IEEE J Solid-State Circuits 9:269CrossRefGoogle Scholar
  4. 4.
    An Y, Behnam A, Pop E, Ural A (2013) Appl Phys Lett 102:013110CrossRefGoogle Scholar
  5. 5.
    Mohammad SN (2005) J Appl Phys 97:063703CrossRefGoogle Scholar
  6. 6.
    Shiwakoti N, Bobby A, Asokan K, Antony B (2016) Mater Sci Semicond Process 42:378CrossRefGoogle Scholar
  7. 7.
    Kim H, Kumar MD, Kim J (2015) Sens Actuators A 233:290CrossRefGoogle Scholar
  8. 8.
    Altindal S, Safakasar Y, Kaya A, Sonmez Z (2012) J Optoelectron Adv Mater 14:998Google Scholar
  9. 9.
    Chong MMV, Lee PS, Tok AIY (2016) Mater Sci Eng B 210:57CrossRefGoogle Scholar
  10. 10.
    Cappellani A, Keddie JL, Barradas NP, Jackson SM (1999) Solid-State Electron 43:1095CrossRefGoogle Scholar
  11. 11.
    Yang W, Marino J, Monson A, Wolden CA (2006) Semicond Sci Technol 21:1573CrossRefGoogle Scholar
  12. 12.
    Kuzmik J, Konstantinidis G, Harasek S, Hascik S, Bertagnolli E, Georgakilas A, Pogany D (2004) Semicond Sci Technol 19:1364CrossRefGoogle Scholar
  13. 13.
    Kaufmann IR, Pick A, Pereira MB, Boudinov H (2017) Thin Solid Films 621:184CrossRefGoogle Scholar
  14. 14.
    Yuan Z, Li D, Wang M, Chen P, Gong D, Cheng P, Yang D (2008) Appl Phys Lett 92:121908CrossRefGoogle Scholar
  15. 15.
    Kumar M, Kumar M, Kumar D (2010) Microelectron Eng 87:447CrossRefGoogle Scholar
  16. 16.
    Ishfaq M, Kha MR, Ali A, Bhardwaj S, Cepek C, Bhatti AS (2017) Mater Sci Semiconduc Process 63:107CrossRefGoogle Scholar
  17. 17.
    Tinoco JC, Estrada M, Iniguez B, Cerdeira A (2008) Microelectron Reliab 48:370CrossRefGoogle Scholar
  18. 18.
    Farhan MS, Zalnezhad E, Bushroa AR (2013) MRS Bull 48:4206CrossRefGoogle Scholar
  19. 19.
    Alimardani N, McGlone JM, Wager JF, Conley JF (2014) J Vac Sci Technol A 32:01A122CrossRefGoogle Scholar
  20. 20.
    Sekhar MC, Reddy NNK, Verma VK, Uthanna S (2016) Ceram Int 42:18870CrossRefGoogle Scholar
  21. 21.
    Chandra SVJ, Sekhar MC, Rao GM, Uthanna S (2009) J Mater Sci-Mater Electron 20:295CrossRefGoogle Scholar
  22. 22.
    Rhoderick EH, Williams RH (1988) Metal-semiconductor contacts, 2nd edn. Clarendon Press, OxfordGoogle Scholar
  23. 23.
    Sekhar MC, Reddy NNK, Akkera HS, Reddy BP, Rajendar V, Uthanna S, Park S i -H (2017) J Alloys Compd 718:104CrossRefGoogle Scholar
  24. 24.
    Ozkartal A, Temirci C (2016) Sol Energy 132:96CrossRefGoogle Scholar
  25. 25.
    Verschraegen J, Burgelman M, Penndorf J (2005) Thin Solid Films 307:480Google Scholar
  26. 26.
    Cheung SK, Cheung NW (1986) Appl Phys Lett 49:85CrossRefGoogle Scholar
  27. 27.
    Norde H (1979) J Appl Phys 50:5052CrossRefGoogle Scholar
  28. 28.
    Fukumoto A, Miwa K (1997) Phys Rev B 55:11155CrossRefGoogle Scholar
  29. 29.
    Wu Y-N, Li L, Cheng HP (2011) Phys Rev B 83:144105CrossRefGoogle Scholar
  30. 30.
    Ono H, Koyanagi K (2000) Appl Phys Lett 77:1431CrossRefGoogle Scholar
  31. 31.
    Zhang JY, Fang Q, Boyd IW (1999) Appl Surf Sci 138:320CrossRefGoogle Scholar
  32. 32.
    Dobal PS, Katiyar RS, Jiang Y, Guo R, Bhalla AS (2000) J Appl Phys 87:8688CrossRefGoogle Scholar
  33. 33.
    Balachandran U, Eror NG (1982) J Mat Sci Lett 1:219CrossRefGoogle Scholar
  34. 34.
    Perez I, Carrejo JLE, Sosa V, Perera FG, Mancillas JRF, Galindo JTE, Rodrguez CIR (2017) J Alloys Compd 712:303CrossRefGoogle Scholar

Copyright information

© Springer Science+Business Media B.V., part of Springer Nature 2018

Authors and Affiliations

  1. 1.Department of PhysicsMadanapalle Institute of Technology and ScienceMadanapalleIndia
  2. 2.Department of PhysicsIndian Institute of ScienceBangaloreIndia
  3. 3.Department of Electronic EngineeringYeungnam UniversityGyeongsanRepublic of Korea
  4. 4.Department of PhysicsSri Venkateswara UniversityTirupatiIndia

Personalised recommendations