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Influence of Ta2O5 Interfacial Oxide Layer Thickness on Electronic Parameters of Al/Ta2O5/p-Si/Al Heterostructure

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Abstract

We describe the impact of Ta2O5 interfacial oxide layer thickness (ranging from 100-350 nm) on electrical and structural properties of Al/Ta2O5/p-Si/Al Metal-Insulator-Semiconductor (MIS) Schottky barrier diodes using RF magnetron sputtering. We studied the Schottky barrier device parameters such as ideality factor, barrier height and series resistance and are evaluated from current-voltage (I-V) measurements. The barrier height and ideality factor values are significantly varying with Ta2O5 oxide layer thickness and found to be 0.58 eV, 2.35, 0.71 eV, 2.10 and 0.78 eV, 1.87 for 20, 40 and 60 nm, respectively. It was noticed that the calculated barrier height and ideality values for this prepared Al/Ta2O5/p-Si/Al MIS Schottky barrier diode were greatly improved than those conventional metal-semiconductor (MS) Schottky diodes. The XRD studies revealed that the 100-nm thickness film exhibited poor crystallinity whereas 200 and 350 nm thickness films showed improved crystallinity with orthorhombic phase of β-Ta2O5. The presence of this orthorhombic phase of β-Ta2O5 is confirmed with FTIR studies. To explore the structural transformations in Ta2O5 films with varying thicknesses, Raman spectroscopy was utilized. In addition, the improvement in Schottky diode parameters was correlated with the enhanced crystallinity noticed in XRD studies.

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References

  1. Bestas AN, Yazici S, Aktas F, Abay B (2014) Appl Surf Sci 318:280

    Article  CAS  Google Scholar 

  2. Aydin ME, Yakuphanoglu F, Eom JH, Hwang DH (2007) Physica B 387:239

    Article  CAS  Google Scholar 

  3. VanTuyl RL, Liechti CA (1974) IEEE J Solid-State Circuits 9:269

    Article  Google Scholar 

  4. An Y, Behnam A, Pop E, Ural A (2013) Appl Phys Lett 102:013110

    Article  Google Scholar 

  5. Mohammad SN (2005) J Appl Phys 97:063703

    Article  Google Scholar 

  6. Shiwakoti N, Bobby A, Asokan K, Antony B (2016) Mater Sci Semicond Process 42:378

    Article  CAS  Google Scholar 

  7. Kim H, Kumar MD, Kim J (2015) Sens Actuators A 233:290

    Article  CAS  Google Scholar 

  8. Altindal S, Safakasar Y, Kaya A, Sonmez Z (2012) J Optoelectron Adv Mater 14:998

    CAS  Google Scholar 

  9. Chong MMV, Lee PS, Tok AIY (2016) Mater Sci Eng B 210:57

    Article  CAS  Google Scholar 

  10. Cappellani A, Keddie JL, Barradas NP, Jackson SM (1999) Solid-State Electron 43:1095

    Article  CAS  Google Scholar 

  11. Yang W, Marino J, Monson A, Wolden CA (2006) Semicond Sci Technol 21:1573

    Article  CAS  Google Scholar 

  12. Kuzmik J, Konstantinidis G, Harasek S, Hascik S, Bertagnolli E, Georgakilas A, Pogany D (2004) Semicond Sci Technol 19:1364

    Article  CAS  Google Scholar 

  13. Kaufmann IR, Pick A, Pereira MB, Boudinov H (2017) Thin Solid Films 621:184

    Article  CAS  Google Scholar 

  14. Yuan Z, Li D, Wang M, Chen P, Gong D, Cheng P, Yang D (2008) Appl Phys Lett 92:121908

    Article  Google Scholar 

  15. Kumar M, Kumar M, Kumar D (2010) Microelectron Eng 87:447

    Article  CAS  Google Scholar 

  16. Ishfaq M, Kha MR, Ali A, Bhardwaj S, Cepek C, Bhatti AS (2017) Mater Sci Semiconduc Process 63:107

    Article  CAS  Google Scholar 

  17. Tinoco JC, Estrada M, Iniguez B, Cerdeira A (2008) Microelectron Reliab 48:370

    Article  CAS  Google Scholar 

  18. Farhan MS, Zalnezhad E, Bushroa AR (2013) MRS Bull 48:4206

    Article  CAS  Google Scholar 

  19. Alimardani N, McGlone JM, Wager JF, Conley JF (2014) J Vac Sci Technol A 32:01A122

    Article  Google Scholar 

  20. Sekhar MC, Reddy NNK, Verma VK, Uthanna S (2016) Ceram Int 42:18870

    Article  Google Scholar 

  21. Chandra SVJ, Sekhar MC, Rao GM, Uthanna S (2009) J Mater Sci-Mater Electron 20:295

    Article  CAS  Google Scholar 

  22. Rhoderick EH, Williams RH (1988) Metal-semiconductor contacts, 2nd edn. Clarendon Press, Oxford

    Google Scholar 

  23. Sekhar MC, Reddy NNK, Akkera HS, Reddy BP, Rajendar V, Uthanna S, Park S i -H (2017) J Alloys Compd 718:104

    Article  Google Scholar 

  24. Ozkartal A, Temirci C (2016) Sol Energy 132:96

    Article  CAS  Google Scholar 

  25. Verschraegen J, Burgelman M, Penndorf J (2005) Thin Solid Films 307:480

    Google Scholar 

  26. Cheung SK, Cheung NW (1986) Appl Phys Lett 49:85

    Article  CAS  Google Scholar 

  27. Norde H (1979) J Appl Phys 50:5052

    Article  CAS  Google Scholar 

  28. Fukumoto A, Miwa K (1997) Phys Rev B 55:11155

    Article  CAS  Google Scholar 

  29. Wu Y-N, Li L, Cheng HP (2011) Phys Rev B 83:144105

    Article  Google Scholar 

  30. Ono H, Koyanagi K (2000) Appl Phys Lett 77:1431

    Article  CAS  Google Scholar 

  31. Zhang JY, Fang Q, Boyd IW (1999) Appl Surf Sci 138:320

    Article  Google Scholar 

  32. Dobal PS, Katiyar RS, Jiang Y, Guo R, Bhalla AS (2000) J Appl Phys 87:8688

    Article  CAS  Google Scholar 

  33. Balachandran U, Eror NG (1982) J Mat Sci Lett 1:219

    Article  CAS  Google Scholar 

  34. Perez I, Carrejo JLE, Sosa V, Perera FG, Mancillas JRF, Galindo JTE, Rodrguez CIR (2017) J Alloys Compd 712:303

    Article  CAS  Google Scholar 

Download references

Acknowledgements

One of the authors Dr. N. Nanda Kumar Reddy thankfully acknowledges the Management of Madanapalle Institute of Technology and Science (MITS, Madanapalle, A.P, India) and DST-FIST-2015 (SR/FST/College-263) Program for providing the financial support and Dr. S. Uthanna is thankful to the University Grants Commission, New Delhi, India for award of UGC-BSR Faculty Fellowship.

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Authors and Affiliations

  1. Department of Physics, Madanapalle Institute of Technology and Science, Madanapalle, 517325, India

    N. Nanda Kumar Reddy

  2. Department of Physics, Indian Institute of Science, Bangalore, 560 012, India

    Harish Sharma Akkera

  3. Department of Electronic Engineering, Yeungnam University, 280 Daehak-roGyeongsan-siGyeongsangbuk-do, Gyeongsan, 3854, Republic of Korea

    M. Chandra Sekhar

  4. Department of Physics, Sri Venkateswara University, Tirupati, 517502, India

    S. Uthanna

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  1. N. Nanda Kumar Reddy
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  2. Harish Sharma Akkera
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  3. M. Chandra Sekhar
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  4. S. Uthanna
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Correspondence to N. Nanda Kumar Reddy or Harish Sharma Akkera.

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Reddy, N.N.K., Akkera, H.S., Sekhar, M.C. et al. Influence of Ta2O5 Interfacial Oxide Layer Thickness on Electronic Parameters of Al/Ta2O5/p-Si/Al Heterostructure. Silicon 11, 159–164 (2019). https://doi.org/10.1007/s12633-018-9840-1

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  • DOI: https://doi.org/10.1007/s12633-018-9840-1

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