Impact of Silicon Doping on the Properties of Transparent Conducting CdO Thin Films
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CdO thin films doped with different amounts of silicon ions have been deposited on glass substrates by the vacuum evaporation method in order to improve their properties for application as transparent conducting oxide (TCO) films. The structural, electrical, and optical properties of the host CdO films were systematically studied. The realization of doping with silicon ions was confirmed and studied by the X-ray diffraction (XRD) method. It was concluded that Si ions occupied locations in interstitial positions and structural vacancies of the CdO lattice. The bandgap of Si-doped CdO was blue shifted following the Moss-Burstein (B-M) effect. The dc-electrical behaviors were studied by the Van der Pauw method showing that the prepared Si-doped CdO films were degenerate semiconductors of controllable opto-electrical properties by doping level. The utmost improvements in mobility (μ) and conductivity (σ) took place with the host CdO film doped with ∼2% Si, so that the mobility increased by ∼10 times and the conductivity by ∼100 times compared to the pristine CdO film. The results show that silicon is effective for CdO utilization in applications in the TCO field.
KeywordsCadmium-silicon oxide Si-doped CdO CdO films
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- 2.Robertson J, Falabretti B (2011) In: Ginley D, Hosono H, Paine DC (eds) Handbook of transparent conductors, pp 27–50. Springer Science + Business Media LLC 2010Google Scholar
- 5.Shannon RD (1976) Revised effective ionic radii and systematic studies of interatomic distances in halides and chalcogenides. Acta Crystallogr Sect Found Crystallogr A 32:751–767Google Scholar
- 13.Powder Diffraction File, Joint Committee for Powder Diffraction Studies (JCPDS) file No. 05-0640Google Scholar
- 14.Dakhel AA, Hamad H (2012) Investigation on high carrier mobility in chromium incorporated CdO thin films on glass. Int J Thin Film Sci Technol 1:25–33Google Scholar
- 15.Barrett CS, Massalski TB (1980) Structure of metals. Pergamon, Oxford, p 204Google Scholar
- 20.Tauc J, Abelesn F (eds) (1969) Optical properties of solids. North Holland, AmsterdamGoogle Scholar
- 23.Pankove JI (1975) Optical processes in semiconductors. Dover, New York, p 36Google Scholar
- 24.Zhang FC, Cui HW, Ruan XX, Zhang WH (2014) First-principles study of structural and electronic properties of CdO. J Chem Pharm Res 6:1658–1662Google Scholar