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Metals and Materials International

, Volume 24, Issue 2, pp 415–421 | Cite as

Thermoelectric Properties of Cu-doped Bi2−xSbxTe3 Prepared by Encapsulated Melting and Hot Pressing

  • Woo-Jin Jung
  • Il-Ho Kim
Article

Abstract

P-type Bi2−xSbxTe3:Cum (x = 1.5–1.7 and m = 0.002–0.003) solid solutions were synthesized using encapsulated melting and were consolidated using hot pressing. The effects of Sb substitution and Cu doping on the charge transport and thermoelectric properties were examined. The lattice constants decreased with increasing Sb and Cu contents. As the amount of Sb substitution and Cu doping was increased, the electrical conductivity increased, and the Seebeck coefficient decreased owing to the increase in the carrier concentration. All specimens exhibited degenerate semiconductor characteristics and positive Hall and Seebeck coefficients, indicating p-type conduction. The increased Sb substitution caused a shift in the onset temperature of the intrinsic transition and bipolar conduction to higher temperatures. The electronic thermal conductivity increased with increasing Sb and Cu contents owing to the increase in the carrier concentration, while the lattice thermal conductivity slightly decreased due to alloy scattering. A maximum figure of merit, ZTmax = 1.25, was achieved at 373 K for Bi0.4Sb1.6Te3:Cu0.003.

Keywords

Thermoelectric Bismuth telluride Copper doping Encapsulated melting Hot pressing 

Notes

Acknowledgements

This study was supported by the Civil-Military Technology Cooperation Program, Republic of Korea.

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Copyright information

© The Korean Institute of Metals and Materials 2018

Authors and Affiliations

  1. 1.Department of Materials Science and EngineeringKorea National University of TransportationChungjuRepublic of Korea

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