Review of contact-resistance analysis in nano-material
- 415 Downloads
Recently, investigating the unique electrical properties of low-dimensional (One- and two-dimensional) materials as alternatives to silicon has become popular among researchers. In order to observe the intrinsic properties and device performance, it is essential to elucidate the electron transport at the electrode/nanomaterial interface. This study reviews various current approaches used to evaluate the contact resistance of electronic devices based on the most representative low-dimensional nano-materials such as carbon nanotubes, nanowires, graphene and molybdenum disulfide. Various analytical factors that have generally not been considered in conventional electronics are introduced to define the contact resistance within the nano-meter scale. Additionally, a comparison of three different methods for determining the contact resistance to interpret experimental data is conducted. Finally, several attempted efforts to reduce the contact resistance are presented.
KeywordsCNTs Contact resistance Field-effect transistor Graphene Low-dimensional material MoS2 Nanowire Schottky barrier
Unable to display preview. Download preview PDF.
- N. Z. Haron and S. Hamdioui, Why is CMOS scaling coming to an END?, 3rd International Design and Test Workshop, IEEE (2008) 98–103.Google Scholar
- K. Nagashio, T. Nishimura, K. Kita and A. Toriumi, Metal/graphene contact as a performance killer of ultra-high mobility graphene analysis of intrinsic mobility and contact resistance, 2009 IEEE International Electron Devices Meeting (IEDM), IEEE (2009) 1–4.Google Scholar
- D. K. Schroder, Semiconductor material and device characterization, John Wiley & Sons (2006).Google Scholar
- B. Radisavljevic, M. B. Whitwick and A. Kis, Integrated circuits and logic operations based on single-layer MoS2, ACS Nano, 11 (12) (2011) 5111–5116.Google Scholar
- M. Fontana, T. Deppe, A. K. Boyd, M. Rinzan, A. Y. Liu, M. Paranjape and P. Barbara, Electron-hole transport and photovoltaic effect in gated MoS2 Schottky junctions, Scientific Reports, 3 (2013).Google Scholar