Journal of Mechanical Science and Technology

, Volume 32, Issue 2, pp 539–547 | Cite as

Review of contact-resistance analysis in nano-material

  • Jae Young Park
  • Jinsoo Cho
  • Seong Chan JunEmail author
Invited Review Paper


Recently, investigating the unique electrical properties of low-dimensional (One- and two-dimensional) materials as alternatives to silicon has become popular among researchers. In order to observe the intrinsic properties and device performance, it is essential to elucidate the electron transport at the electrode/nanomaterial interface. This study reviews various current approaches used to evaluate the contact resistance of electronic devices based on the most representative low-dimensional nano-materials such as carbon nanotubes, nanowires, graphene and molybdenum disulfide. Various analytical factors that have generally not been considered in conventional electronics are introduced to define the contact resistance within the nano-meter scale. Additionally, a comparison of three different methods for determining the contact resistance to interpret experimental data is conducted. Finally, several attempted efforts to reduce the contact resistance are presented.


CNTs Contact resistance Field-effect transistor Graphene Low-dimensional material MoS2 Nanowire Schottky barrier 


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Copyright information

© The Korean Society of Mechanical Engineers and Springer-Verlag GmbH Germany, part of Springer Nature 2018

Authors and Affiliations

  1. 1.Department of Mechanical EngineeringYonsei UniversityKorea
  2. 2.Department of Computer EngineeringGachon UniversityGyeonggi-doKorea

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