High-performance ultra-low leakage current graphene-based screen-printed field-effect transistor on paper substrate

Abstract

Exploiting the advantages of additive patterning process over complex fabrication processes, herein we report the fabrication of field-effect transistor (FET) using the screen-printing method. The graphene conductive composite dielectric ink as the channel and the dielectric layer respectively was screen printed on cellulose paper substrate. The fabricated device shows the hole and electron mobility of 135 \(\hbox {cm}^{2}/\)V s and 98 \(\hbox {cm}^{2}/\)V s respectively with an ultra-low leakage current of \(\sim \)25 nA. The proposed technique can be used for large-scale roll-to-roll commercial manufacturing of disposable FET-based sensors such as temperature and IR sensors, health monitoring devices etc.

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Acknowledgements

Authors are thankful to Dr Amit Kumar, Amity Institute of Renewable and Alternative Energy, Amity University, Noida, Dr A K Tripathi, Sr. Research Engineer, NCFLEXE, IIT Kanpur, Mr Sandeep Sharma and Karamvir Singh, research scholars, UIET, Kurukshetra University, Kurukshetra for various technical discussions. This research is funded by TEQIP-III, MHRD, Government of India (Grant No. TEQIP-III).

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Correspondence to Sandeep Kumar.

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Bhatt, K., Kumar, S. & Tripathi, C.C. High-performance ultra-low leakage current graphene-based screen-printed field-effect transistor on paper substrate. Pramana - J Phys 94, 31 (2020). https://doi.org/10.1007/s12043-019-1906-0

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Keywords

  • Graphene field effect transistor
  • gate leakage current
  • screen printing
  • mobility

PACS No

  • 89.20.Kk