High-performance ultra-low leakage current graphene-based screen-printed field-effect transistor on paper substrate


Exploiting the advantages of additive patterning process over complex fabrication processes, herein we report the fabrication of field-effect transistor (FET) using the screen-printing method. The graphene conductive composite dielectric ink as the channel and the dielectric layer respectively was screen printed on cellulose paper substrate. The fabricated device shows the hole and electron mobility of 135 \(\hbox {cm}^{2}/\)V s and 98 \(\hbox {cm}^{2}/\)V s respectively with an ultra-low leakage current of \(\sim \)25 nA. The proposed technique can be used for large-scale roll-to-roll commercial manufacturing of disposable FET-based sensors such as temperature and IR sensors, health monitoring devices etc.

This is a preview of subscription content, access via your institution.

Fig. 1
Fig. 2
Fig. 3


  1. 1.

    X Wang, H Tian, M A Mohammad, C Li, C Wu, Y Yang and T-L Ren, Nature Commun.6, 7767 (2015)

    ADS  Article  Google Scholar 

  2. 2.

    S Kanaparthi and S Badhulika, Green Chemistry18(12), 3640 (2016)

    Article  Google Scholar 

  3. 3.

    M A Andersson, O Habibpour, J Vukusic and J Stake, Electron. Lett. 48(14), 861 (2012)

    ADS  Article  Google Scholar 

  4. 4.

    L H Hess, M Seifert and J A Garrido, Proceedings of the IEEE 101(7), 1780 (2013)

  5. 5.

    Monika, C Rani, S Sandeep, S Kumar, K Bhatt, R Singh and C C Tripathi, Indian J. Pure Appl. Phys. 56(5), 361 (2017)

  6. 6.

    N Kurra, D Dutta and G U Kulkarni, Phys. Chem. Chem. Phys. 15(21), 8367 (2013)

    Article  Google Scholar 

  7. 7.

    E Fortunato, N Correia, P Barquinha, L Pereira, G Goncalves and R Martins, IEEE Electron. Device Lett. 29(9), 988 (2008)

    Article  Google Scholar 

  8. 8.

    A A Cagang, I H Abidi, A Tyagi, J Hu, F Xu, T J Lu and Z Luo, Anal. Chim. Acta 917, 101 (2016)

    Article  Google Scholar 

  9. 9.

    D H Tien, J-Y Park, K B Kim, N Lee and Y Seo, Sci. Rep. 6, 25050 (2016)

    ADS  Article  Google Scholar 

  10. 10.

    L G B Machuno, A R Oliveira, R H Furlan, A B Lima, L C Morais and R V Gelamo, Mater. Res. 18(4), 775 (2015)

  11. 11.

    L G De Arco, Y Zhang, A Kumar and C Zhou, IEEE Trans. Nanotechnol. 8(2), 135 (2009)

    Google Scholar 

  12. 12.

    L G P Martins, Y Song, T Zeng, M S Dresselhaus, J Kong and P T Araujo, Proc. Natl Acad. Sci. 110(44), 17762 (2013)

  13. 13.

    A L Dravniece, G K Kundzins, K Teivena, V Kampars and M Rutkis, Latvian J. Phys. Tech. Sci. 51(4), 61 (2014)

  14. 14.


  15. 15.

    S Kumar, K Bhatt, P Kumar, S Sharma, A Kumar and C C Tripathi, RSC Adv9(15), 8262 (2019)

    ADS  Article  Google Scholar 

  16. 16.

    B K Sharma and J-H Ahn, Solid-State Electron. 89, 177 (2013)

    ADS  Article  Google Scholar 

  17. 17.

    B J Kim, H Jang, S-K Lee, B H Hong, J-H Ahn and J H Cho, Nano Lett.  10(9), 3464 (2010)

    ADS  Article  Google Scholar 

  18. 18.

    K Bhatt, C Rani, M Vaid, A Kapoor, P Kumar, S Kumar, S Shriwastava, S Sharma, R Singh and C C Tripathi, Pramana – J. Phys. 90(6), 75 (2017)

    ADS  Article  Google Scholar 

Download references


Authors are thankful to Dr Amit Kumar, Amity Institute of Renewable and Alternative Energy, Amity University, Noida, Dr A K Tripathi, Sr. Research Engineer, NCFLEXE, IIT Kanpur, Mr Sandeep Sharma and Karamvir Singh, research scholars, UIET, Kurukshetra University, Kurukshetra for various technical discussions. This research is funded by TEQIP-III, MHRD, Government of India (Grant No. TEQIP-III).

Author information



Corresponding author

Correspondence to Sandeep Kumar.

Rights and permissions

Reprints and Permissions

About this article

Verify currency and authenticity via CrossMark

Cite this article

Bhatt, K., Kumar, S. & Tripathi, C.C. High-performance ultra-low leakage current graphene-based screen-printed field-effect transistor on paper substrate. Pramana - J Phys 94, 31 (2020). https://doi.org/10.1007/s12043-019-1906-0

Download citation


  • Graphene field effect transistor
  • gate leakage current
  • screen printing
  • mobility


  • 89.20.Kk