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CMOS monolithic pixel sensors research and development at LBNL

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Abstract

This paper summarizes the recent progress in the design and characterization of CMOS pixel sensors at LBNL. Results of lab tests, beam tests and radiation hardness tests carried out at LBNL on a test structure with pixels of various sizes are reported. The first results of the characterization of back-thinned CMOS pixel sensors are also reported, and future plans and activities are discussed.

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Authors and Affiliations

  1. Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA

    D. Contarato, J. -M. Bussat, P. Denes, L. Greiner, T. Kim, T. Stezelberger, H. Wieman, M. Battaglia & B. Hooberman

  2. Department of Physics, University of California, Berkeley, CA, 94720, USA

    M. Battaglia, B. Hooberman & L. Tompkins

Authors
  1. D. Contarato
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  2. J. -M. Bussat
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  3. P. Denes
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  4. L. Greiner
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  5. T. Kim
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  6. T. Stezelberger
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  7. H. Wieman
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  8. M. Battaglia
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  9. B. Hooberman
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  10. L. Tompkins
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Corresponding author

Correspondence to D. Contarato.

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Contarato, D., Bussat, J.M., Denes, P. et al. CMOS monolithic pixel sensors research and development at LBNL. Pramana - J Phys 69, 963–967 (2007). https://doi.org/10.1007/s12043-007-0213-3

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  • DOI: https://doi.org/10.1007/s12043-007-0213-3

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