Wuhan University Journal of Natural Sciences

, Volume 23, Issue 1, pp 70–78 | Cite as

Quad-level cell NAND design and soft-bit generation for low-density parity-check decoding in system-level application

Physics and Biology


QLC (Quad-Level Cell) NAND flash will be one of the future technologies for next generation memory chip after three-dimensional (3D) TLC (Triple-Level Cell) stacked NAND flash. In QLC device, data errors will easily occur because of 24 data levels in the limited voltage range. This paper studies QLC NAND technology which is 4 bits per cell. QLC programming methods based on 16 voltage levels and reading method based on “half-change” Gray coding are researched. Because of the probable error impact of QLC NAND cell’s voltage change, the solution of generating the soft information after XOR (exclusive OR) the soft bits by internal read mechanism is presented for Low-Density Parity-Check (LDPC) Belief Propagation (BP) decoding in QLC design for its system level application.


QLC (Quad-Level Cell) NAND error-correcting code (ECC) Low-Density Parity-Check (LDPC) Soft-Bit Generation 

CLC number

TN 492 


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Copyright information

© Wuhan University and Springer-Verlag GmbH Germany, part of Springer Nature 2018

Authors and Affiliations

  1. 1.School of Optics and Electronic InformationHuazhong University of Science and TechnologyHubeiChina

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