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1 550 nm long-wavelength vertical-cavity surface emitting lasers

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Abstract

A 1 550 nm long-wavelength vertical cavity surface emitting laser (VCSEL) on InP substrate is designed and fabricated. The transfer matrix is used to compute reflectivity spectrum of the designed epitaxial layers. The epitaxial layers mainly consist of 40 pairs of n-AlxGayIn(1−x−y)As/InP, and 6 strain compensated AlxGayIn(1−x−y)As/InP quantum wells on n-InP substrate, respectively. The top distributed Bragg reflection (DBR) mirror system has been formed by fabricating 4.5 pairs of SiO2/Si. The designed cavity mode is around 1 536 nm. The dip of the fabricated cavity mode is around 1 530 nm. The threshold current is 30 mA and the maximum output power is around 270 μW under CW operation at room temperature.

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Authors and Affiliations

  1. State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China

    Li-Jie Liu  (刘丽杰), Yuan-Da Wu  (吴远大), Yue Wang  (王玥), Jun-Ming An  (安俊明) & Xiong-Wei Hu  (胡雄伟)

  2. College of Material Science and Optoelectronic Technology, University of Chinese Academy of Sciences, Beijing, 100049, China

    Li-Jie Liu  (刘丽杰), Yuan-Da Wu  (吴远大) & Jun-Ming An  (安俊明)

Authors
  1. Li-Jie Liu  (刘丽杰)
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  2. Yuan-Da Wu  (吴远大)
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  3. Yue Wang  (王玥)
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  4. Jun-Ming An  (安俊明)
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  5. Xiong-Wei Hu  (胡雄伟)
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Corresponding author

Correspondence to Yuan-Da Wu  (吴远大).

Additional information

This work has been supported by the National High Technology and Development Program of China (No.2015AA016902).

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Liu, LJ., Wu, YD., Wang, Y. et al. 1 550 nm long-wavelength vertical-cavity surface emitting lasers. Optoelectron. Lett. 14, 342–345 (2018). https://doi.org/10.1007/s11801-018-8037-6

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  • DOI: https://doi.org/10.1007/s11801-018-8037-6

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