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Experimental and Modeling Studies on the Microstructures and Properties of Oxidized Aluminum Nitride Ceramic Substrates

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Abstract

Oxidation of aluminum nitride (AlN) ceramic substrates doped with 2 wt.% Y2O3 was performed in air at temperatures ranging from 1000 to 1300 °C for various lengths of time. Microstructure, bending strength, and thermal conductivity of the oxidized AlN substrates were studied experimentally and also via mathematical models. The results show that the oxide layer formed on the AlN substrates is composed of α-Al2O3 nanocrystallines and interconnected micropores. Longitudinal and transverse cracks are induced in the oxide layer under tensile and shear stresses, respectively. Intergranular oxidation of the AlN grains close to the oxide layer/AlN interface also occurs, leading to widening and cracking of the AlN grain boundaries. These processes result in the monotonous degradation of bending strength and thermal conductivity of the oxidized AlN substrates. Two mathematic models concerning these properties of the oxidized AlN substrates versus the oxide layer thickness were put forward. They fit well with the experimental results.

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Acknowledgments

This work was financially supported by Projects of Scientific and Technological Research, Anhui Province, China (Grants Nos. 15czz02047, 1604a0902162).

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Authors and Affiliations

  1. School of Materials Science and Engineering, Hefei University of Technology, Hefei, 230009, China

    Ye Cao, Xin Wei, Jianmin Wang & Wenming Tang

  2. 43 Institute, China Electronics Technology Group Corporation, Hefei, 230088, China

    Haixian Xu, Jun Zhan, Hao Zhang & Song Cui

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  1. Ye Cao
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  2. Haixian Xu
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  3. Jun Zhan
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  4. Hao Zhang
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  5. Xin Wei
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  6. Jianmin Wang
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  7. Song Cui
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  8. Wenming Tang
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Correspondence to Wenming Tang.

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Cao, Y., Xu, H., Zhan, J. et al. Experimental and Modeling Studies on the Microstructures and Properties of Oxidized Aluminum Nitride Ceramic Substrates. J. of Materi Eng and Perform 27, 3297–3303 (2018). https://doi.org/10.1007/s11665-018-3415-6

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  • DOI: https://doi.org/10.1007/s11665-018-3415-6

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