Effect of Sc and Sr on the Eutectic Si Morphology and Tensile Properties of Al-Si-Mg Alloy
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To study the effect of Sc and Sr additions on modifying eutectic silicon particles and mechanical properties for Al-Si-Mg casting alloy, they were added with different amounts in F357 alloy without beryllium addition in the present work. It was found that (0.4 wt.% Sc and 0.04 wt.% Sr)-modified F357 alloy presented the optimal tensile properties when compared with the individual addition of Sc or Sr. This was mainly attributed to the synergic modification of eutectic Si in F357 alloys due to the combined additions of Sc and Sr. The silicon modification mechanisms via Sc and Sr were emphasized to be examined in this paper, and the fracture mechanism of the obtained alloys was also discussed.
KeywordsAl-Si-Mg mechanical properties microstructure modification Sr and Sc
The authors are grateful to the financial support by National Natural Science Foundation of China (NSFC, Nos. 51671007, 51671012 and 51401010), the National 863 Project (No. 2013AA031001), the National 973 Project (No. 2012CB619503) and International Science and Technology Cooperation Program of China (Nos. 2015DFA51430, 2013DFB70200) to carry out this work.
- 1.A. Pacz, ed., 1921. US Patent; p. 13810630Google Scholar
- 4.J. Sylvain, Modification of AI-Si7-Cu6 by Sodium, Antimony, and Strontium Right Bracket, Fonerie, 1977, 363, p 13–24Google Scholar
- 13.C. Xu, W. Xiao, R. Zheng, S. Hanada, H. Yamagata, and C. Ma, The Synergic Effects of Sc and Zr on the Microstructure and Mechanical Properties of Al-Si-Mg Alloy, Mater. Des., 2015, 88, p 485–492Google Scholar
- 16.ASTM E8. Standard Test Methods for Tension Testing of Metallic Materials (2004).Google Scholar
- 20.M. Tiryakioĝlu and J. Campbell, Quality Index for Aluminum Alloy Castings, AFS Transactions, 2013, 121, p 217–222Google Scholar
- 39.H. Huff and D. Gilmer, High Dielectric Constant Materials: VLSI, MOSFET Applications, Springer Science & Business Media, Berlin, 2006Google Scholar
- 40.G. Azimov, S. Zainabidinov, Y.I. Kozlov, Diffusion of Vanadium in Silicon, ed, American Institute of Physics Circulation Fulfillment Div, 500 Sunnyside Blvd, Woodbury, NY 11797–2999, 1989, pp. 1169–1170Google Scholar
- 41.D. Fisher, Diffusion in Silicon, Scitec Publications, Zurich, 1998Google Scholar
- 43.K. Mills, ASM Handbook, Volume 12: Fractography, ASM International, Materials Park, 1987Google Scholar