Annealing Behavior at Triple Junctions in High-Purity Aluminum After Slight Cold Rolling
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High-purity polycrystalline aluminum samples with a typical grain size of approximately 30 μm were slightly cold-rolled with a thickness reduction of 15%, and then, off-line in situ electron backscatter diffraction was used to identify the annealing behavior at triple junctions during annealing at 400 °C. The results show that recrystallization nuclei are developed at some triple junctions during annealing. High-angle grain boundaries migrate from harder grains to softer grains at the triple junctions leading to the formation of nuclei. All such nuclei show Σ3 orientation relationships with the parent grains, and the bounded Σ3 boundaries are found to be incoherent. During further annealing, these nuclei are consumed by other growing grains, indicating that their presence is just a release of the strain concentration at the triple junctions.
Keywordsaluminum annealing behavior electron backscatter diffraction triple junction
This project was financially supported by the National Natural Science Foundation of China (Grant Nos. 51171095, 51271058 and 51471100).