Reduction of Contact Resistivity by Nano-Textured Contact

Abstract

The feasibility of reducing contact resistance by adding nano-textures on the contact surface is evaluated by three-dimensional simulation. Upward and downward pyramids and hemispheres are considered, and the effects of contact area and electric field are discussed. The downward nano-texture has a stronger electric field than the upward nano-texture; thus the increasing contact area will be more effectively used and lead to a greater improvement effect. On the other hand, the electric field of the hemisphere nano-texture is lower than that of the pyramid nano-texture. With proper design, the nano-textured contact can effectively reduce contact resistance up to 30–50%. Therefore, the proposed nano-textured contact is a promising approach with contact resistivity approaching physical limits.

This is a preview of subscription content, log in to check access.

References

  1. 1.

    G.E. Moore, Electronics 38, 8 (1965).

    Google Scholar 

  2. 2.

    H. Wu, O. Gluschenkov, G. Tsutsui, C. Niu, K. Brew, C. Durfee, C. Prindle, V. Kamineni, S. Mochizuki, and C. Lavoie, in IEDM (2018), pp. 819–822.

  3. 3.

    A. Agrawal, J. Lin, M. Barth, R. White, B. Zheng, S. Chopra, S. Gupta, K. Wang, J. Gelatos, and S.E. Mohney, Appl. Phys. 104, 11 (2014).

    Google Scholar 

  4. 4.

    F. Padovani and R. Stratton, Solid State Electron. 9, 7 (1966).

    Article  Google Scholar 

  5. 5.

    C. Crowell and V. Rideout, Solid State Electron. 12, 2 (1969).

    Google Scholar 

  6. 6.

    B. Downey, S. Datta, and S.E. Mohney, Semicond. Sci. Technol. 25, 1 (2009).

    Google Scholar 

  7. 7.

    H. Yu, M. Schaekers, E. Rosseel, A. Peter, J.-G. Lee, W.-B. Song, S. Demuynck, T. Chiarella, J.-Å. Ragnarsson, and S. Kubicek, in IEDM (2015), pp. 592–595.

  8. 8.

    H. Yu, M. Schaekers, A. Peter, G. Pourtois, E. Rosseel, J.-G. Lee, W.-B. Song, K.M. Shin, J.-L. Everaert, and S.A. Chew, IEEE Trans. Electron Devices 63, 12 (2016).

    Google Scholar 

  9. 9.

    C.-N. Ni, X. Li, S. Sharma, K. Rao, M. Jin, C. Lazik, V. Banthia, B. Colombeau, N. Variam, and A. Mayur, in VLSI Technology (2015), pp. T118–T119.

  10. 10.

    R. Kim, U.E. Avci, and I.A. Young, IEEE Trans. Electron Devices 66, 3 (2019).

    Article  Google Scholar 

  11. 11.

    Y. Wu, H. Xu, L.-H. Chua, K. Han, W. Zou, T. Henry, J. Zhang, C. Wang, C. Sun, and X. Gong, in VLSI Technology (2019), pp. T150–T151.

  12. 12.

    Y. Wu, W. Wang, S. Masudy-Panah, Y. Li, K. Han, L. He, Z. Zhang, D. Lei, S. Xu, and Y. Kang, in VLSI Technology (2018), pp. 77–78.

  13. 13.

    H. Niimi, Z. Liu, O. Gluschenkov, S. Mochizuki, J. Fronheiser, J. Li, J. Demarest, C. Zhang, B. Liu, J. Yang, M. Raymond, B. Haran, H. Bu, and T. Yamashita, IEEE Electron Device Lett. 37, 11 (2016).

    Article  Google Scholar 

  14. 14.

    H. Seidel, L. Csepregi, A. Heuberger, and H. Baumgärtel, J. Electrochem. Soc. 137, 11 (1990).

    Article  Google Scholar 

  15. 15.

    C.-T. Seo, C.-H. Bae, D.-S. Eun, J.-K. Shin, and J.-H. Lee, Jpn. J. Appl. Phys. 43, 11R (2004).

    Article  Google Scholar 

  16. 16.

    A.K. Mallik, G. Peterson, and M.H. Weichold, J. Microelectromech. Syst. 4, 3 (1995).

    Article  Google Scholar 

  17. 17.

    TCAD Sentaurus Tutorial. (Synopsys, Inc., Mountain View, CA, 2016)

Download references

Acknowledgments

This work was financially supported by the Center for Semiconductor Technology Research from The Featured Areas Research Center Program within the framework of the Higher Education Sprout Project by the Ministry of Education (MOE) in Taiwan, R.O.C., and was also supported in part by the Ministry of Science and Technology, Taiwan, R.O.C. under Grant 108-2633-E-009-001. The authors thank Prof. Chenming Hu for his initial suggestions and helpful discussion.

Author information

Affiliations

Authors

Corresponding author

Correspondence to Bing-Yue Tsui.

Additional information

Publisher's Note

Springer Nature remains neutral with regard to jurisdictional claims in published maps and institutional affiliations.

Rights and permissions

Reprints and Permissions

About this article

Verify currency and authenticity via CrossMark

Cite this article

Tsui, B., Lee, Y. & Lee, C. Reduction of Contact Resistivity by Nano-Textured Contact. Journal of Elec Materi (2020). https://doi.org/10.1007/s11664-020-08236-1

Download citation

Keywords

  • Contact resistance
  • contact resistivity
  • contact area
  • Schottky barrier
  • nano-texture