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InGaAs/GaAsSb Type-II Superlattices for Short-Wavelength Infrared Detection

  • U.S. Workshop on Physics and Chemistry of II-VI Materials 2018
  • Published:
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Abstract

Type-II superlattices based on In0.53Ga0.47As/GaAs0.51Sb0.49 (5 nm/5 nm) lattice-matched to InP substrates are investigated for short-wavelength infrared detection. Eight band k.p simulations were utilized to extract information on the electronic band structure, which were in turn used to calculate the optical absorption spectrum of the superlattice. The effective bandgap is calculated to be 0.494 eV, corresponding to a cutoff wavelength of λc = 2.51 μm and optical absorption coefficient of approximately 2000 cm−1 at 2 μm. Quantum efficiency was calculated for a standard InGaAs/T2SL/InGaAs p-i-n device structure, where quantum efficiency exceeding 50% at 2 μm may be achieved. Dark current was calculated considering Auger, radiative, and Shockley–Read–Hall generation-recombination, where Shockley–Read–Hall recombination-generation was found to be the limiting mechanism for a trap density greater than 5 × 1014 cm−3, and radiatively limited performance is predicted for a lower trap density. The estimated dark current density is expected to be comparable to existing HgCdTe technology, while outperforming extended-range InGaAs by more than an order of magnitude.

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Acknowledgments

The authors would like to thank Dr. Stefan Birner for assistance with the nextnano software.

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Authors and Affiliations

  1. Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, MI, 48109, USA

    Justin Easley & Jamie Phillips

  2. Applied Physics Program, University of Michigan, Ann Arbor, MI, 48109, USA

    Justin Easley

  3. Princeton Infrared Technologies Inc., Monmouth Junction, NJ, 08852, USA

    Christopher R. Martin & Martin H. Ettenberg

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  1. Justin Easley
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  2. Christopher R. Martin
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Correspondence to Justin Easley.

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Easley, J., Martin, C.R., Ettenberg, M.H. et al. InGaAs/GaAsSb Type-II Superlattices for Short-Wavelength Infrared Detection. J. Electron. Mater. 48, 6025–6029 (2019). https://doi.org/10.1007/s11664-019-07441-x

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  • DOI: https://doi.org/10.1007/s11664-019-07441-x

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