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In Situ Band-Edge Monitoring of Cd1−yZnyTe Substrates for Molecular Beam Epitaxy of HgCdTe

  • U.S. Workshop on Physics and Chemistry of II-VI Materials 2018
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Abstract

We demonstrate the benefits of in situ band-edge monitoring of CdZnTe substrates for molecular beam epitaxy (MBE). The production of large-area Cd1−yZnyTe(211)B substrates up to and exceeding 8 × 8 cm2 brings new challenges from the perspective of MBE growth of Hg1−xCdxTe. Localized variation of the Zn concentration, even less than y = 0.01, can potentially cause variation in lattice-misfit with the HgCdTe epi-layers potentially resulting in ∼ 10 × difference in etch-pit density. Variation in Zn concentration is expected to be greater over larger substrates, and thus local differences in dislocation density may also be expected. The substrate Zn concentration has been determined using in situ band-edge measurement prior to nucleation of HgCdTe. Ex situ infrared transmission spectra has been used to confirm the validity of in situ band-edge wavelength measurements. We also examine the usefulness of band-edge thermometry (BET), for monitoring substrate temperature during Te/oxide desorption and for nucleation of HgCdTe epi-layers. In principle, knowledge of the exact Zn content across the largest area of the substrate, allows for tuning growth parameters to maximize yield of perfectly lattice-matched material.

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References

  1. J.P. Zanatta, G. Badano, P. Ballet, C. Largeron, J. Baylet, O. Gravrand, J. Rothman, P. Castelein, J.P. Chamonal, A. Million, G. Destefanis, S. Mibord, E. Brochier, and P. Costa, J. Electron. Mater. 35, 1231 (2006).

    Article  Google Scholar 

  2. C.M. Lennon, L.A. Almeida, R.N. Jacobs, J.K. Markunas, P.J. Smith, J. Arias, A.E. Brown, and J. Pellegrino, J. Electron. Mater. 41, 2965 (2012).

    Article  Google Scholar 

  3. R.N. Jacobs, C. Nozaki, L.A. Almeida, M. Jaime-Vasquez, C.M. Lennon, J.K. Markunas, J.D. Benson, P.J. Smith, W.F. Zhao, D.J. Smith, C. Billman, J. Arias, and J. Pellegrino, J. Electron. Mater. 41, 2707 (2012).

    Article  Google Scholar 

  4. F.E. Arkun, D. Edwall, J. Ellworth, S. Douglas, M. Zandian, and M. Carmody, J. Electron. Mater. 46, 5374 (2017).

    Article  Google Scholar 

  5. J.D. Benson, L.O. Bubulac, M. Jaime-Vasquez, C.M. Lennon, P.J. Smith, R.N. Jacobs, J.K. Markunas, L.A. Almeida, A.J. Stoltz, J.M. Arias, P.S. Wijewarnasuriya, J. Peterson, M. Reddy, M.F. Vilela, S.M. Johnson, D.D. Lofgreen, A. Yulius, M. Carmody, R. Hirsch, J. Fiala, and S. Motakef, J. Electron. Mater. 44, 3082 (2015).

    Article  Google Scholar 

  6. JX Nippon Mining & Metal Corporation (2018). www.nmm-jx-group.com.

  7. M. Martinka, L.A. Almeida, J.D. Benson, and J.H. Dinan, J. Electron. Mater. 30, 632 (2001).

    Article  Google Scholar 

  8. S.R. Johnson, C. Lavoie, T. Tiedje, and J.A. Mackenzie, J. Vac. Sci. Technol. B 11, 1007 (1993).

    Article  Google Scholar 

  9. R.N. Sacks, D. Barlett, C.A. Taylor, and J. Williams, J. Vac. Sci. Technol. B 23, 1247 (2005).

    Article  Google Scholar 

  10. S.R. Johnson, T. Tiedje, and J.A. Mackenzie, J. Appl. Phys. 78, 5609 (1995).

    Article  Google Scholar 

  11. K-Space Associates Inc., Application Notes: Accurate Temperature Monitoring in low temperature MBE growth, Aug 2016. www.k-space.com.

  12. D.R. Lide, CRC Handbook of Chemistry and Physics, 79th ed. (Boca Raton, FL: CRC Press, 1998).

    Google Scholar 

  13. A.J. Syllaios, P.-K.K. Liao, and B.E. Dean, Proc. SPIE (1994). https://doi.org/10.1117/12.189248.

    Google Scholar 

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Jacobs, R.N., Pinkie, B., Arias, J. et al. In Situ Band-Edge Monitoring of Cd1−yZnyTe Substrates for Molecular Beam Epitaxy of HgCdTe. J. Electron. Mater. 48, 6138–6144 (2019). https://doi.org/10.1007/s11664-019-07354-9

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  • DOI: https://doi.org/10.1007/s11664-019-07354-9

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