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Development of InAs/InAsSb Type II Strained-Layer Superlattice Unipolar Barrier Infrared Detectors

  • U.S. Workshop on Physics and Chemistry of II-VI Materials 2018
  • Published:
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Abstract

We recently reported mid-wavelength infrared (MWIR) InAs/InAsSb type II strained-layer superlattice (T2SLS) unipolar barrier detectors and focal-plane arrays with significantly higher operating temperature than InSb. Herein, we document the development leading to the MWIR InAs/InAsSb T2SLS detectors at the NASA Jet Propulsion Laboratory. We also briefly compare the InAs/InAsSb T2SLS with some other approaches.

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Acknowledgments

The authors thank J. Nguyen, J. M. Mumolo, J. K. Liu, and A. Liao for technical assistance. The research described in this publication was carried out at the Jet Propulsion Laboratory, California Institute of Technology, under a contract with the National Aeronautics and Space Administration.

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Author notes

  1. Linda Höglund

    Present address: IRnova AB, Kista, Sweden

Authors and Affiliations

  1. NASA Jet Propulsion Laboratory, California Institute of Technology, M/S 302-231, 4800 Oak Grove Drive, Pasadena, CA, 91109-8099, USA

    David Z. Ting, Alexander Soibel, Arezou Khoshakhlagh, Sam A. Keo, Sir B. Rafol, Linda Höglund, Edward M. Luong, Anita M. Fisher, Cory J. Hill & Sarath D. Gunapala

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  1. David Z. Ting
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  2. Alexander Soibel
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Correspondence to David Z. Ting.

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Ting, D.Z., Soibel, A., Khoshakhlagh, A. et al. Development of InAs/InAsSb Type II Strained-Layer Superlattice Unipolar Barrier Infrared Detectors. J. Electron. Mater. 48, 6145–6151 (2019). https://doi.org/10.1007/s11664-019-07255-x

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  • DOI: https://doi.org/10.1007/s11664-019-07255-x

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