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Development of Electron Beam Induced Current Characterization of HgCdTe Based Photodiodes

  • U.S. Workshop on Physics and Chemistry of II-VI Materials 2018
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Abstract

In this paper, HgCdTe photodiodes are characterized by low temperature electron beam induced current (EBIC), with an emphasis on the impact of electron beam energy on the spatial resolution. Monte Carlo simulations are compared to experimental measurements using a comb shaped junction pattern. With a 15 keV electron beam, both converge to a resolution in the 1.3–1.4 μm range. On cross-section samples, lowering the beam energy to 2 keV leads to a 40 nm resolution. In regard to photodiode technologies, namely extrinsic p-on-n and intrinsic n-on-p Hg0.7Cd0.3Te, top view and cross-section typical EBIC characteristic decay lengths are measured. While EBIC exponential decays show no bias voltage dependence suggesting that the system is dominated by diffusion and not drift, the impact of the injection level on transport properties is discussed in regard to the literature.

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  1. CEA, LETI, Université Grenoble Alpes, 38000, Grenoble, France

    A. Yèche, F. Boulard & O. Gravrand

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  1. A. Yèche
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  2. F. Boulard
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Yèche, A., Boulard, F. & Gravrand, O. Development of Electron Beam Induced Current Characterization of HgCdTe Based Photodiodes. J. Electron. Mater. 48, 6045–6052 (2019). https://doi.org/10.1007/s11664-019-07140-7

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