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Dielectric Properties of (Bi0.5K0.5)ZrO3 Modified (K0.5Na0.5)NbO3 Ceramics as High-Temperature Ceramic Capacitors

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Abstract

(1 − x)K0.5Na0.5NbO3-x(Bi0.5K0.5)ZrO3 [abbreviated as (1 − x)KNN-xBKZ, 0 ≤ x ≤ 0.08] lead-free ceramics have been fabricated by a solid-state processing route. Based on the x-ray diffraction data and temperature-dependent dielectric characteristics, an orthorhombic phase for x ≤ 0.03 and single rhombohedral one for x ≥ 0.05 at room temperature were determined. The cell volume firstly increases, then decreases and finally increases with increasing BKZ, depending on ionic size and crystallographic structure. For the sample of x = 0.05, a temperature-stable high permittivity (~ 1736 ± 15%) along with low dielectric loss tangent (≤ 5%) is recorded from 158°C to 407°C. In addition, the activation energies of dielectric relaxation and dc conductivity at high temperatures were characterized by impedance spectroscopy. A combined effect of lattice distortion and oxygen vacancies on the magnitude of activation energies was discussed.

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Acknowledgements

This work was supported by the National Natural Science Foundation of China (Nos. 11264010, 11564010, 51402196), the Natural Science Foundation of Guangxi (GA139008, CB38006, AA138162, FA198015 and 2016GXNSFDA380027), the Scientific Research Foundation of Guangxi University (Grant XTZ160530), and the China Postdoctoral Science Foundation (Grants 2014M552229 and 2015T80915).

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The manuscript was written by contributions of all authors. All authors have given approval to the final version of the manuscript.

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Correspondence to Laijun Liu, Xiaojun Kuang or Brahim Elouadi.

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Yan, T., Ren, S., Ma, X. et al. Dielectric Properties of (Bi0.5K0.5)ZrO3 Modified (K0.5Na0.5)NbO3 Ceramics as High-Temperature Ceramic Capacitors. J. Electron. Mater. 47, 7106–7113 (2018). https://doi.org/10.1007/s11664-018-6641-7

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