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Co-P Diffusion Barrier for p-Bi2Te3 Thermoelectric Material

  • TMS2018 Microelectronic Packaging, Interconnect, and Pb-free Solder
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Abstract

(Bi0.25Te0.75)2Te3 (p-Bi2Te3) is thermoelectric material that can harvest waste heat into useful electric power. A severe reaction between p-Bi2Te3 and Sn-based solder decreases the reliability of thermoelectric modules. Sn/p-Bi2Te3 and Sn3.0Ag0.5Cu (SAC305)/p-Bi2Te3 with and without electroless Co-P at the interfaces were investigated in this study. Without a Co-P layer, brittle SnTe, Sn3Sb2, and Bi precipitates formed at the interface. A thin layer of SnTe after reflow results in growth of a layer-type Sn3Sb2 instead of a strip-like Sn3Sb2. The addition of a Co-P layer to both systems successfully inhibited the formation of brittle intermetallic compounds. Shear test results confirmed that the Co-P diffusion barrier also effectively increased the joint strength.

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Authors and Affiliations

  1. Department of Chemical and Materials Engineering, National Central University, Taoyuan City, 32001, Taiwan

    Chun-Hsien Wang, Hsien-Chien Hsieh & Albert T. Wu

  2. National Synchrotron Radiation Research Center, Hsinchu, 300, Taiwan

    Hsin-Yi Lee

Authors
  1. Chun-Hsien Wang
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  2. Hsien-Chien Hsieh
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  3. Hsin-Yi Lee
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  4. Albert T. Wu
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Correspondence to Albert T. Wu.

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Wang, CH., Hsieh, HC., Lee, HY. et al. Co-P Diffusion Barrier for p-Bi2Te3 Thermoelectric Material. J. Electron. Mater. 48, 53–57 (2019). https://doi.org/10.1007/s11664-018-6633-7

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  • DOI: https://doi.org/10.1007/s11664-018-6633-7

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