Abstract
This paper reports the formation of structural defects in the lattice of silicon (n-Si) single crystals, as a result of irradiation by different intensities and pulses of electrons. The samples were studied by means of Hall effect measurements of electro-physical parameters (specifically the concentration of the main charge carriers) as a function of temperature and radiation dose. The role of the radiation current density (pulse height) is discussed, which gives rise to a peculiar behavior in the electrical-physical properties of n-Si. In particular, thermal processes are found not to develop, due to the ultrafast (pulse duration in the range 10−12–10−13s) nature of the incident radiation, which causes an almost “pure” energy interaction to occur between the radiation and the atoms within the crystal, and the formation of cluster defects. A scheme for the time-scale of the formation of these radiation defects is presented. From the dose and temperature dependences of the concentration of main charge carriers, the radiation defects introduction rates were determined.
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References
E.A. Carr, Nucl. Sci. NS 11, 12 (1964).
E.A. Carr, Nucl. Sci. NS 12, 30 (1965).
H.J. Stein, IEEE Trans. Rad. Defects. Conf. on Irrad. effects in Semiconductors. Toulouse, 7-11 March, 1967.
D.I. Vaisburd, in Intern. Conf. on Rad. Physics of Semiconductors and Related Materials, p. 198. Tbilisi, 1980.
Y. Condo, M. Hirati, and M. Ueda, J. Phys. Soc. Jpn 33, 151 (1972).
P.S. Gwozdz and J.S. Koehler, Phys. Rev. 6, 4571 (1972).
L.E. Garzeva, L.V. Levchuk, V.N. Mordkovich, and M.I. Starchik, Radiation defects in non-metallic Crystals,v.3, chapter 1, Kiev, “Naukova Dumka”—edition, p. 284, 1971.
G.D. Watkins, Materials science and technology, Vol. 4/5, ed. R.W. Cahn, P. Haasen, and E.J. Kramer (Hoboken: Wiley, 2005), p. 105.
D.V. Gromov, V.N. Mordkovich, D.M. Pazhin, and P.K. Skorobogatov, Electron Techn Ser 2 Semiconduct Devices Issue 1, 19 (2011).
H.N. Yeritsyan, A.A. Sahakyan, N.E. Grigoryan, E.A. Hakhverdyan, V.V. Harutyunyan, V.A. Sahakyan, A.A. Khachatryan, B.A. Grigoryan, V.S. Avagyan, G.A. Amatuni, and A.S. Vardanyan, J. Mod. Phys. 7, 1413 (2016). https://doi.org/10.4236/jmp.2016.712128.
V.M. Lenchenko, Physical-Chemical Problems of Solid States (Siberia: Edition of Krasnoyarks University, 1975), p. 3.
V.S. Vavilov, and N.A. Ukhin, Radiation Effects in Semiconductors and Semiconductor Devices, Atom-edition (Moscow, 1969) p. 310.
R.F. Konopleva, and V.I. Ostroumov, The Interaction of Charged High Energy Particles with Silicon and Germanium. Atom-edition (Moscow, 1975) p. 127.
H.N. Yeritsyan, A.A. Sahakyan, S.K. Nikoghosyan, V.V. Harutyunyan, S. Ohanyan, and V.S. Avagyan. J. Spacecr. Rockets 48(1), 34 (2011). Publication of Amer. Inst. of Aeronautics and Astronautics (NASA).
H.N. Yeritsyan, A.A. Sahakyan, N.E. Grigoryan, V.V. Harutyunyan, V.M. Tsakanov, B.A. Grigoryan, A.S. Yeremyan, and G.A. Amatuni, J. Electron. Mater. (2016). https://doi.org/10.1007/s11664-016-4975-6.
M.K. Sheinkman and A.I. Shik, Fizika i Tekhnika Poluprovodnikov (Russian) 10, 209 (1976).
P.G. Coleman, C.J. Edwardson, A.P. Knightsand, and R.M. Gwilliam, New J. Phys. 4, 025007 (2012). https://doi.org/10.1088/1367-2630/14/2/025007.
F. Hartmann, NIMA 666, 25 (2012).
A. Scora, D. Grojo, and M. Sentis, J. Appl. Phys. 122, 045702 (2017). https://doi.org/10.1063/1.4994307.
K. Takakura, H. Ohyama, H. Murakawa, T. Yoshida, J.M. Rafi, R. Job, A. Ulyashin, E. Simoen, and C. Claeys, J. Appl. Phys. 27, 133–135 (2004).
E.G. Sieverts and J.W. Corbett, Solid State Commun. 43, 41 (1982).
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Yeritsyan, H.N., Sahakyan, A.A., Grigoryan, N.E. et al. The Use of Different Pulsed Electron Irradiation for the Formation of Radiation Defects in Silicon Crystals. J. Electron. Mater. 47, 4010–4015 (2018). https://doi.org/10.1007/s11664-018-6286-6
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DOI: https://doi.org/10.1007/s11664-018-6286-6