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Journal of Electronic Materials

, Volume 47, Issue 9, pp 5025–5032 | Cite as

Design and Photovoltaic Properties of Graphene/Silicon Solar Cell

  • Dikai Xu
  • Xuegong Yu
  • Lifei Yang
  • Deren Yang
Topical Collection: 17th Conference on Defects (DRIP XVII)
First Online:
Received:
Accepted:
Part of the following topical collections:
  1. 17th Conference on Defects-Recognition, Imaging and Physics in Semiconductors (DRIP XVII)

Abstract

Graphene/silicon (Gr/Si) Schottky junction solar cells have attracted widespread attention for the fabrication of high-efficiency and low-cost solar cells. However, their performance is still limited by the working principles of Schottky junctions. Modulating the working mechanism of the solar cells into a quasi p–n junction has advantages, including higher open-circuit voltage (VOC) and less carrier recombination. In this study, Gr/Si quasi p–n junction solar cells were formed by inserting a tunneling Al2O3 interlayer in-between graphene and silicon, which led to obtain the PCE up to 8.48% without antireflection or chemical doping techniques. Our findings could pave a new way for the development of Gr/Si solar cells.

Keywords

Graphene silicon interface solar cells Schottky junction 
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Copyright information

© The Minerals, Metals & Materials Society 2018

Authors and Affiliations

  1. 1.State Key Lab of Silicon Materials and School of Materials Science and EngineeringZhejiang UniversityHangzhouPeople’s Republic of China

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