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Optical Modulation of BST/STO Thin Films in the Terahertz Range

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Abstract

The \( {\hbox{Ba}}_{0.7} {\hbox{Sr}}_{0.3} {\hbox{TiO}}_{3} \) (BST) thin film (30.3 nm) deposited on a\( {\hbox{SrTiO}}_{3} \) (STO) film/silicon substrate sample was modulated by 532 nm continuous-wave laser in the range of 0.2–1 THz at room temperature. The refractive index variation was observed to linearly increase at the highest 3.48 for 0.5 THz with the pump power increasing to 400 mW. It was also found that the BST/STO sample had a larger refractive index variation and was more sensitive to the external optical field than a BST monolayer due to the epitaxial strain induced by the STO film. The electric displacement–electric field loops results revealed that the increasing spontaneous polarization with the STO film that was induced was responsible for the larger refractive index variation of the BST/STO sample. In addition, the real and imaginary part of the permittivity were observed increasing along with the external field increasing, due to the soft mode hardening.

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Authors and Affiliations

  1. Wuhan National Laboratory for Optoelectronics, School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, 430074, China

    Ying Zeng, Songjie Shi, Furi Ling & Jianquan Yao

  2. School of Optical and Electronic Information and Engineering Research Center for Functional Ceramics of the Ministry of Education, Huazhong University of Science and Technology, Wuhan, 430074, China

    Ling Zhou

  3. Institute of Laser and Opto-Electronics, College of Precision Instruments and Opto-Electronics Engineering, Tianjin University, Tianjin, 300072, China

    Jianquan Yao

  4. Key Laboratory of Opto-Electronics Information Technology, Ministry of Education, Tianjin University, Tianjin, 300072, China

    Jianquan Yao

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  1. Ying Zeng
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  2. Songjie Shi
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  3. Ling Zhou
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  4. Furi Ling
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Correspondence to Furi Ling.

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Zeng, Y., Shi, S., Zhou, L. et al. Optical Modulation of BST/STO Thin Films in the Terahertz Range. J. Electron. Mater. 47, 3855–3860 (2018). https://doi.org/10.1007/s11664-018-6259-9

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  • DOI: https://doi.org/10.1007/s11664-018-6259-9

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