Journal of Electronic Materials

, Volume 47, Issue 9, pp 5007–5012 | Cite as

Observation of Threading Dislocations in Ammonothermal Gallium Nitride Single Crystal Using Synchrotron X-ray Topography

  • Y. Yao
  • Y. Ishikawa
  • Y. Sugawara
  • Y. Takahashi
  • K. Hirano
Topical Collection: 17th Conference on Defects (DRIP XVII)
Part of the following topical collections:
  1. 17th Conference on Defects-Recognition, Imaging and Physics in Semiconductors (DRIP XVII)


Synchrotron monochromatic-beam x-ray topography observation has been performed on high-quality ammonothermal gallium nitride single crystal to evaluate threading dislocations (TD) in a nondestructive manner. Asymmetric diffractions with six equivalent g-vectors of 11–26, in addition to a symmetric diffraction with g = 0008, were applied to determine the Burgers vectors (b) of dislocations. It was found that pure edge-type TDs with \( {\varvec b} = \left\langle {11 - 20} \right\rangle /3 \) did not exist in the sample. A dominant proportion of TDs were of mixed type with \( {\varvec b} = \left\langle {11 - 20} \right\rangle /3 + \left\langle {0001} \right\rangle \), i.e., so-called c + a dislocations. Pure 1c screw dislocations with \( {\varvec b} = \left\langle {0001} \right\rangle \) and TDs with c-component larger than 1c were also observed.


GaN ammonothermal dislocation synchrotron x-ray topography Burgers vector 


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Copyright information

© The Minerals, Metals & Materials Society 2018

Authors and Affiliations

  • Y. Yao
    • 1
  • Y. Ishikawa
    • 1
  • Y. Sugawara
    • 1
  • Y. Takahashi
    • 2
  • K. Hirano
    • 2
  1. 1.Japan Fine Ceramics Center (JFCC)NagoyaJapan
  2. 2.High Energy Accelerator Research Organization (KEK)TsukubaJapan

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