Influence of the Interaction Between Graphite and Polar Surfaces of ZnO on the Formation of Schottky Contact
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We show that the interaction between graphite and polar surfaces of ZnO affects electrical properties of graphite/ZnO Schottky junctions. A strong interaction of the Zn-face with the graphite contact causes interface imperfections and results in the formation of laterally inhomogeneous Schottky contacts. On the contrary, high quality Schottky junctions form on the O-face, where the interaction is significantly weaker. Charge transport through the O-face ZnO/graphite junctions is well described by the thermionic emission model in both forward and reverse directions. We further demonstrate that the parameters of the graphite/ZnO Schottky diodes can be significantly improved when a thin layer of ZnO2 forms at the interface between graphite and ZnO after hydrogen peroxide surface treatment.
KeywordsZnO Schottky contact graphite-ZnO interfaces metal-insulator-semiconductor
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- 18.S.M. Sze and K.K. Ng, Physics of Semiconductor Devices, 3rd ed. (Hoboken: Wiley, 2007).Google Scholar