Journal of Electronic Materials

, Volume 47, Issue 9, pp 4998–5001 | Cite as

LVM Spectroscopy Investigation of Complex Defects in InAs Single Crystals Grown by the LEC Method

  • Guiying Shen
  • Youwen Zhao
  • Jingming Liu
  • Yongbiao Bai
  • Zhiyuan Dong
  • Hui Xie
  • Xiaoyu Chen
Topical Collection: 17th Conference on Defects (DRIP XVII)
Part of the following topical collections:
  1. 17th Conference on Defects-Recognition, Imaging and Physics in Semiconductors (DRIP XVII)


N-type InAs single crystals have been studied by local vibrational mode (LVM) spectroscopy, photoluminescence spectroscopy (PL), glow discharge mass spectrometry (GDMS) and Hall effect measurement, respectively. Carbon–hydrogen complex defects CH3 and CH2 are detected in as-grown and annealed samples. After annealing, CH3 dissociates and more CH2 is formed. Results of PL and Hall measurement suggest that the complex defects of CH3 act as acceptors in n-type InAs and correlate with the change of electrical compensation after annealing. The 383 meV PL peak is attributed to CH3 defects. Based on the expected energy level of CH3 in InAs, we predicted that CH3 complex defects in InAs should introduce a resonant level 32 meV above the valence band minimum.


InAs III–V compound semiconductors LVM carbon-related complexes 


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Copyright information

© The Minerals, Metals & Materials Society 2018

Authors and Affiliations

  • Guiying Shen
    • 1
    • 2
  • Youwen Zhao
    • 1
    • 2
  • Jingming Liu
    • 1
  • Yongbiao Bai
    • 1
    • 2
  • Zhiyuan Dong
    • 1
  • Hui Xie
    • 1
  • Xiaoyu Chen
    • 1
    • 2
  1. 1.Key Laboratory of Semiconductor Materials Science, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Institute of SemiconductorsChinese Academy of SciencesBeijingChina
  2. 2.College of Materials Science and Opto-electronic TechnologyUniversity of Chinese Academy of SciencesBeijingChina

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