Abstract
We have developed instrumentation for collecting the luminescence spectrum from solid samples while they are irradiated by electrons of sufficient energy to produce point defects. This instrumentation is used to investigate the evolution of the broad region of the zinc oxide luminescence spectrum which lies between 250 nm and 650 nm (4.95 eV to 1.90 eV). Electron irradiation is at 0.55 MeV and 1.0 MeV. Irradiation at 0.55 MeV produces only defects associated with displaced oxygen. Irradiation at 1.0 MeV produces defects which can be associated with displacement of either oxygen or Zn. The samples were held at liquid-nitrogen temperature to give the best possible defect lifetime for any defect created. A luminescent band centered at 415 nm (2.99 eV) was observed to grow with increasing irradiation dose in samples grown by pulsed laser deposition. There was no difference in the growth of the luminescence during irradiation at 0.55 MeV and 1.0 MeV. No discernible luminescence or alteration of the luminescence from the traditional green band region was observed during irradiation of these samples.
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Acknowledgements
We wish to thank D. C. Look, Semiconducting Research Center, Wright State University, Dayton, OH for suggesting this line of inquiry. We wish to thank K. Leedy, Air Force Research Laboratory, Wright–Patterson AFB, Dayton, OH for providing the PLD ZnO films.
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Todd, D.M., Clark, J.D. & Farlow, G. Tracking Luminescence of ZnO During Electron Beam Irradiation. J. Electron. Mater. 43, 863–867 (2014). https://doi.org/10.1007/s11664-014-3066-9
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DOI: https://doi.org/10.1007/s11664-014-3066-9