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Nitrogen Plasma Processing of SiO2/4H-SiC Interfaces

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Abstract

A nitrogen plasma annealing process for gate dielectric applications in 4H-SiC metal oxide semiconductor (MOS) technology has been investigated. This process results in substantially greater interfacial N coverage at the SiO2/4H-SiC interface and lower interface trap densities than the state-of-the-art nitric oxide (NO) annealing process. Despite these exciting results, the field-effect mobility of MOS field-effect transistors (MOSFETs) fabricated by use of this process is very similar to that of NO-annealed MOSFETs. These results emphasize the importance of understanding mobility-limiting mechanisms in addition to charge trapping in next-generation 4H-SiC MOSFETs.

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References

  1. T. Seyller, Appl. Phys. A 85, 371 (2006).

    Article  Google Scholar 

  2. J.A. Cooper Jr., Phys. Status Solidi A 162, 305 (1997).

    Article  Google Scholar 

  3. V.V. Afanas’ev, M. Bassler, G. Pensl, and M. Schulz, Phys. Status Solidi A 162, 321 (1997).

    Article  Google Scholar 

  4. V.V. Afanas’ev, Microelectron. Eng. 48, 241 (1999).

    Article  Google Scholar 

  5. G.Y. Chung, C.C. Tin, J.R. Williams, K. McDonald, R.K. Chanana, R.A. Weller, S.T. Pantelides, L.C. Feldman, O.W. Holland, M.K. Das, and J.W. Palmour, IEEE Electron Device Lett. 22, 176 (2001).

    Article  Google Scholar 

  6. J. Rozen, A.C. Ahyi, X. Zhu, J.R. Williams, and L.C. Feldman, IEEE Trans. Electron Devices 58, 11 (2011).

    Article  Google Scholar 

  7. J. Rozen, S. Dhar, M.E. Zvanut, J.R. Williams, and L.C. Feldman, J. Appl. Phys. 105, 12 (2009).

    Article  Google Scholar 

  8. S. Dhar, L.C. Feldman, K.C. Chang, Y. Cao, L.M. Porter, J. Bentley, and J.R. Williams, J. Appl. Phys. 97, 074902 (2005).

    Article  Google Scholar 

  9. H. Yang, D. Wang, and H. Nakashima, J. Electrochem. Soc. 159, H1 (2011).

    Article  Google Scholar 

  10. H. Yano, Y. Furumoto, T. Niwa, T. Hatayama, Y. Uraoka, and T. Fuyuki, Mater. Sci. Forum 457–460, 1333 (2004).

    Article  Google Scholar 

  11. X. Zhu, A.C. Ahyi, M. Li, Z. Chen, J. Rozen, L.C. Feldman, and J.R. Williams, Solid-State Electron. 57, 76 (2011).

    Article  Google Scholar 

  12. X. Shen, M.P. Oxley, Y. Puzyrev, B.R. Tuttle, G. Duscher, and S.T. Pantelides, J. Appl. Phys. 108, 123705 (2010).

    Article  Google Scholar 

  13. H. Yoshioka, T. Nakamura, and T. Kimoto, J. Appl. Phys. 112, 024520 (2012).

    Article  Google Scholar 

  14. J.S. Suehle, IEEE Trans. Electron Devices 49, 958 (2002).

    Article  Google Scholar 

  15. H. Shin, K. Noguchi, and C. Hu, IEEE Electron Device Lett. 14, 509 (1993).

    Article  Google Scholar 

  16. E.H. Nicollian and J.R. Brews, MOS Physics and Technology (New York: Wiley, 1982).

    Google Scholar 

  17. R. Kosugi, T. Umeda, and Y. Sakuma, Appl. Phys. Lett. 99, 182111 (2011).

    Article  Google Scholar 

  18. S.C. Sun and J.D. Plummer, IEEE Trans. Electron Devices 27, 1497 (1980).

    Article  Google Scholar 

  19. G. Liu, A.C. Ahyi, Y. Xu, T. Isaac-Smith, Y.K. Sharma, J.R. Williams, L.C. Feldman, and S. Dhar, IEEE Electron. Device Lett. 34, 181 (2013).

    Article  Google Scholar 

  20. S. Dhar, S. Haney, L. Cheng, S.-R. Ryu, A.K. Agarwal, L.C. Yu, and K.P. Cheung, J. Appl. Phys. 108, 5 (2010).

    Article  Google Scholar 

  21. V. Tilak, K. Matocha, and G. Dunne, IEEE Trans. Electron Devices 54, 2823 (2007).

    Article  Google Scholar 

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Authors and Affiliations

  1. Allison Laboratory, Physics Department, Auburn University, Auburn, AL, 36849, USA

    A. Modic, Y.K. Sharma, A.C. Ahyi, J.R. Williams & S. Dhar

  2. Institute for Advanced Materials, Devices and Nanotechnology, Rutgers University, Piscataway, NJ, 08854, USA

    Y. Xu, G. Liu & L.C. Feldman

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  1. A. Modic
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  2. Y.K. Sharma
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  3. Y. Xu
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  4. G. Liu
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  5. A.C. Ahyi
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  6. J.R. Williams
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  7. L.C. Feldman
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  8. S. Dhar
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Correspondence to A. Modic.

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Modic, A., Sharma, Y., Xu, Y. et al. Nitrogen Plasma Processing of SiO2/4H-SiC Interfaces. J. Electron. Mater. 43, 857–862 (2014). https://doi.org/10.1007/s11664-014-3022-8

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  • DOI: https://doi.org/10.1007/s11664-014-3022-8

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