Abstract
Because failures in lead-free solder joints occur at locations other than the most highly shear-strained regions, reliability prediction is challenging. To gain physical understanding of this phenomenon, physically based understanding of how elastic and plastic deformation anisotropy affect microstructural evolution during thermomechanical cycling is necessary. Upon solidification, SAC305 (Sn-3.0Ag-0.5Cu) solder joints are usually single or tricrystals. The evolution of microstructures and properties is characterized statistically using optical and orientation imaging microscopy. In situ synchrotron x-ray measurements during thermal cycling are used to examine how crystal orientation and thermal cycling history change strain history. Extensive characterization of a low-stress plastic ball grid array (PBGA) package design at different stages of cycling history is compared with preliminary experiments using higher-stress package designs. With time and thermal history, microstructural evolution occurs mostly from continuous recrystallization and particle coarsening that is unique to each joint, because of the specific interaction between local thermal and displacement boundary conditions and the strong anisotropic elastic, plastic, expansion, and diffusional properties of Sn crystals. The rate of development of recrystallized microstructures is a strong function of strain and aging. Cracks form at recrystallized (random) boundaries, and then percolate through recrystallized regions. Complications arising from electromigration and corrosion are also considered.
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T.R. Bieler, H. Jiang, L.P. Lehman, T. Kirkpatrick, E.J. Cotts, and B. Nandagopal, IEEE Trans. Compon. Packag. Technol. 31, 370 (2008).
T.R. Bieler, H. Jiang, L.P. Lehman, T. Kirkpatrick, and E.J. Cotts, 2006 Proceedings. 56th Electronic Components & Technology Conference (IEEE Cat. No. 06CH37766C) (2006), p. 6.
L.P. Lehman, S.N. Atavale, T.Z. Fullem, A.C. Giamis, R.K. Kinyanjui, M. Lowenstein, K. Mather, R. Patel, D. Rae, J. Wang, Y. Xing, L. Zavalij, P. Borgesen, and E.J. Cotts, J. Electron. Mater. 33, 1581 (2004).
L.P. Lehman, Y. Xing, T.R. Bieler, and E.J. Cotts, Acta Mater. 58, 3546 (2010).
K.S. Kim, S.H. Huh, and K. Suganuma, Mater. Sci. Eng. A333, 106 (2002).
R. Kinyanjui, L.P. Lehman, L. Zavalij, and E. Cotts, J. Mater. Res. 20, 2914 (2005).
S. Terashima, T. Kobayashi, and M. Tanaka, Sci. Technol. Weld. Join. 13, 732 (2008).
Sun.-Kyoung. Seo, Sung.K. Kang, Moon.Gi. Cho, Da.-Yuan. Shih, and Hyuck.Mo. Lee, J. Electron. Mater. 38, 2461 (2009).
D.W. Henderson, J.J. Woods, T.A. Gosselin, J. Bartelo, D.E. King, T.M. Korhonen, M.A. Korhonen, L.P. Lehman, E.J. Cotts, Sung.K. Kang, P. Lauro, Da-Yuan Shih, C. Goldsmith, and K.P. Puttlitz, J. Mater. Res. 19, 1608 (2004).
J.J. Sundelin, S.T. Nurmi, and T.K. Lepisto, Mater. Sci. Eng. A 474, 201 (2008).
J. Li, H. Xu, T.T. Mattila, J.K. Kivilahti, T. Laurila, and M. Paulasto-Krockel, Comput. Mater. Sci. 50, 690 (2010).
T.T. Mattila and J.K. Kivilahti, IEEE Trans. Compon. Packag. Technol. 33, 629 (2010).
J. Li, H. Xu, T.T. Mattila, J.K. Kivilahti, T. Laurila, and M. Paulasto-Kröckel, Comput. Mater. Sci. 50, 690 (2010).
T.T. Nguyen, D. Yu, and S.B. Park, J. Electron. Mater. 40, 1409 (2011).
I. Dutta, D. Pan, R.A. Marks, and S.G. Jadhav, Mater. Sci. Eng. A 410–411, 48 (2005).
G. Cuddalorepatta and A. Dasgupta, Acta Mater. 58, 5989 (2010).
T.R. Bieler, B. Zhou, L. Blair, A. Zamiri, P. Darbandi, F. Pourboghrat, T.-K. Lee, and K.-C. Liu, Paper 5F.1 (Piscataway, NJ: IRPS/IEEE, 2011), p. IRPS11-573-81.
T.-K. Lee, K.-C. Liu, and T.R. Bieler, J. Electron. Mater. 38, 2685 (2009).
B. Zhou, T.R. Bieler, T.-K. Lee, and K.-C. Liu, J. Electron. Mater. 38, 2702 (2009).
T.R. Bieler, T.-K. Lee, and K.C. Liu, J. Electron. Mater. 38, 2712 (2009).
T.-K. Lee, Bi. Zhou, L. Blair, K.-C. Liu, and T.R. Bieler, Proceedings 2009 International Symposium on Microelectronics, IMAPS—International Microelectronics and Packaging Society, Washington DC (November 1–5, 2009, San Jose, California), p. 142.
B. Zhou, T.R. Bieler, G. Wu, S. Zaefferer, T.-K. Lee, and K.-C. Liu, Proceedings 2009 International Symposium on Microelectronics, IMAPS—International Microelectronics and Packaging Society, Washington DC (November 1–5, 2009, San Jose, California), p. 158.
T.-K. Lee, Bite Zhou, L. Blair, K.-C. Liu, and T.R. Bieler, J. Electron. Mater. 39, 2588 (2010).
B. Zhou, T.R. Bieler, T.-K. Lee, and K.-C. Liu, J. Electron. Mater. 39, 2669 (2010).
T.-K. Lee, H.T. Ma, K.-C. Liu, and J. Xue, J. Electron. Mater. 39, 2564 (2010).
A.U. Telang, T.R. Bieler, S. Choi, and K.N. Subramanian, J. Mater. Res. 17, 2294 (2002).
B. Zhou, T.R. Bieler, G. Wu, S. Zaefferer, T.-K. Lee, and K.-C. Liu (this volume). doi:10.1007/s11664-011-1785-8.
I.E. Anderson, J.W. Walleser, J.L. Harringa, F. Laabs, and A. Kracher, J. Electron. Mater. 38, 2770 (2009).
G.J. Jackson, H. Lu, R. Durairaj, N. Hoo, C. Bailey, N.N. Ekere, and J. Wright, J. Electron. Mater. 33, 1524 (2004).
A.U. Telang, T.R. Bieler, and M.A. Crimp, Mater. Sci. Eng. A421, 22 (2006).
D.G. House and E.V. Vernon, Br. J. Appl. Phys. 11, 254 (1960).
J.A. Rayne and B.S. Chandrasekhar, Phys. Rev. 118, 1545 (1960).
V.T. Deshpande and D.B. Sirdeshmukh, Acta Cryst. 15, 294 (1962).
M. Erinc, P.J.G. Schreurs, and M.G.D. Geers, Mech. Mater. 40, 780 (2008).
M.A. Matin, W.P. Vellinga, and M.G.D. Geers, Mater. Sci. Eng. A 445, 44673 (2007).
S.-K. Seo, S.-K. Kang, M.-G. Cho, and H.-M. Lee, J. Mater. Res. 25, 1950 (2010).
R. Darveaux, K. Banerji, and I.E.E.E. Trans Components, Hybrid. Manuf. Technol. 15, 1013 (1992).
C.H. Raeder, R.W. Messler, and L.F. Coffin, J. Electron. Mater. 28, 1045 (1999).
A.U. Telang, T.R. Bieler, A. Zamiri, and F. Pourboghrat, Acta Mater. 55, 2265 (2007).
R.D. Doherty, D.A. Hughes, F.J. Humphreys, J.J. Jonas, D.J. Jensen, M.E. Kassner, W.E. King, T.R. McNelley, H.J. McQueen, and A.D. Rollett, Mater. Sci. Eng. A, 238219 (1997).
D.C. Yeh and H.B. Huntington, Phys. Rev. Lett. 53, 1469 (1984).
J.R. Lloyd, N.A. Connelly, He. Xiaoli, K.J. Ryan, and B.H. Wood, Microelectron. Reliab. 50, 1355 (2010).
S. Choi, J. Lee, F. Guo, T.R. Bieler, K.N. Subramanian, and J.P. Lucas, JOM 53, 22 (2001).
F. Yang and J.C.M. Li, J. Mater. Sci.: Mater. Electron. 18, 191 (2007).
B. Düzgün, A.E. Ekinci, I. Karaman, and N. Ucar, J. Mech. Behav. Mater. 10, 187 (1999).
A.E. Ekinci, N. Ucar, G. Cankaya, and B. Düzgün, Indian J. Eng. Mater. Sci. 10, 416 (2003).
Y. Kouhashi, Koenronbunshu, Vol. 12 (Sendai: Transactions of the Japanese Society for Strength and Fracture of Materials, 2000), p. 15.
M. Fujiwara and T. Hirokawa, J. Jpn. Inst. Met. 51, 830 (1987).
R.L.J.M. Ubachs, P.J.G. Schreurs, and M.G.D. Geers, Mech. Mater. 39, 685 (2007).
J. Gong, C. Liu, P.P. Conway, and V.V. Silberschmidt, Comput. Mater. Sci. 43, 199 (2008).
A. Zamiri, T.R. Bieler, and F. Pourboghrat, J. Electron. Mater. 38, 231 (2009).
W. Xie, Cisco Systems, Inc, San Jose, CA, unpublished research.
A.U. Telang, T.R. Bieler, and M.A. Crimp, Mater. Sci. Eng. A421, 22 (2006).
A.U. Telang and T.R. Bieler, JOM 57, 44 (2005).
L. Yin, L. Wentlent, L. Yang, B. Arfaei, A. Oasaimeh, and P. Borgesen, J. Electron. Mater. (this volume). doi:10.1007/s11664-011-1762-2.
S.-K. Seo, S.K. Kang, M.G. Cho, and H.M. Lee, JOM 38, 22 (2010).
K. Chen, N. Tamura, M. Kunz, K.N. Tu, and Y.-S. Lai, J. Appl. Phys. 106, 023502 (2009).
W.H. Lin, Albert.T. Wu, S.Z. Lin, T.H. Chuang, and K.N. Tu, J. Electron. Mater. 36, 753 (2007).
M. Lu, D.-Y. Shih, S.K. Kang, C. Goldsmith, and P. Flaitz, J. Appl. Phys. 106, 053509 (2009).
C. Chen, H.M. Tong, and K.N. Tu, Ann. Rev. Mater. Res. 40, 531 (2010).
T.-K. Lee, B. Liu, B. Zhou, T.R. Bieler, and K.-C. Liu, J. Electron. Mater. 40, 1895 (2011).
M.D. Mathew, H. Yang, S. Movva, and K.L. Murty, Metall. Mater. Trans. A 36, 99 (2005).
L.Z. Zhang, R. Dingreville, T. Bartel, and M.T. Lusk, Metall. Mater. Trans. A 42A, 575 (2011).
N.N. Du, Y. Qi, P.E. Krajewski, and A.F. Bower, Metall. Mater. Trans. A 42A, 651 (2011).
P.E. Krajewski, L.G. Hector, N.N. Du, and A.F. Bower, Acta Mater. 58, 1074 (2010).
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Bieler, T.R., Zhou, B., Blair, L. et al. The Role of Elastic and Plastic Anisotropy of Sn in Recrystallization and Damage Evolution During Thermal Cycling in SAC305 Solder Joints. J. Electron. Mater. 41, 283–301 (2012). https://doi.org/10.1007/s11664-011-1811-x
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DOI: https://doi.org/10.1007/s11664-011-1811-x