Abstract
For the first time, nanometer-thin perovskite oxide buffers have been used to accommodate the lattice mismatch between CdTe epitaxial layers and Si substrates. The resulting CdTe is single crystal with quality comparable to that grown by the more mature technology using micron-thick ZnTe or CdTe buffers. This shows that the use of nanometer-thin perovskite oxide buffers is a promising approach for the epitaxial growth of II–VI compounds on Si.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
R. Droopad et al., J. Cryst. Growth 251, 638 (2003).
K. Eisenberg, R. Droopad, Z. Yu, J. Finder, S. Rockwell, J. Holmes, C. Overgaard, and W. Ooms, IEEE Electron. Dev. Lett. 26, 300 (2002).
Y. Liang, H. Li, J. Finder, C. Overgaard, J. Kulik, and S. Shutthanandan, Mater. Res. Soc. Symp. Fall 2004, Abstract book H7.9 (Warrendale, PA: Materials Research Society, 2004), p. 218.
Y. Chen, G. Brill, and N.K. Dhar, J. Cryst. Growth 252, 270 (2003).
Z. Yu et al. (Paper 13E presented at Int. Conf. on GaAs Manufacturing Technology, San Diego, CA, April 8–11, 2002).
J.Q. He, C.L. Jia, V. Vaithyanathan, J. Schubert, A. Gerber, H.H. Kohlstedt, and R.H. Wang, J. Appl. Phys. 97, 104921 (2005).
E.M. Campo, T. Hierl Y. Chen, G. Brill, N.K. Dhar, and J.C.M. Hwang, Proc. SPIE Int. Symp. on Infrared Detector Materials Devices (Bellingham, WA: SPIE, 2004), pp. 86–91.
P. Capper, Properties of Narrow Gap Cadmium-Based Compounds (London: INSPEC, 1994), pp. 446–451 and references therein.
G.M. Lalev, J. Wang, J. Lim, S. Abe, K. Masumoto, and M. Isshiki, Appl. Surf. Sci. 242, 295 (2005).
G. Brill, Y. Chen, P.M. Amirtharaj, W. Sarney, D. Chandler-Horowitz, and N.K. Dhar, J. Electron. Mater. 34, 655 (2005).
D.J. Smith, S.C.Y. Tsen, Y.P. Chen, J.P. Fauri, and S. Sivananthan, Appl. Phys. Lett. 67, 1591 (1995).
Y. Xin, N.D. Browing, S. Rujirawat, S. Sivananthan, and Y.P. Chen, P.D. Nellist, and S.J. Pennycook, J. Appl. Phys. 84, 4292 (1998).
A. Szilagyi and M.N. Grimbergern, J. Vac. Sci. Technol. A 4, 2201 (1986).
R.J. Koestner and H.F. Schaake, J. Vac. Sci. Technol. A 6, 2834 (1998).
Author information
Authors and Affiliations
Rights and permissions
About this article
Cite this article
Campo, E.M., Nakahara, S., Hierl, T. et al. Epitaxial growth of CdTe on Si through perovskite oxide buffers. J. Electron. Mater. 35, 1219–1223 (2006). https://doi.org/10.1007/s11664-006-0244-4
Received:
Accepted:
Issue Date:
DOI: https://doi.org/10.1007/s11664-006-0244-4