Abstract
GaAs-based diode lasers for emission wavelengths between 800 nm and 1060 nm with AlGaAs-cladding and GaInP-waveguide layers were grown by MOVPE. For wavelengths above 940 nm broad area devices with InGaAs QWs show state-of-the-art threshold current densities. Ridge-waveguide lasers fabricated by selective etching achieve 200 mW CW monomode output powers. (In)GaAsP QW-based diode lasers with an emitting wavelengths around 800 nm suffer from problems at the upper GaInP/AlGaAs interface. Asymmetric structures with a lower AlGaAs/GaInP and an upper AlGaAs/AlGaAs waveguide not only avoid this interface but also offer better carrier confinement. Such structures show very high slope efficiencies and a high T0. Maximum output powers of 7 W CW are obtained from 4 mm long devices.
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Bugge, F., Knauer, A., Gramlich, S. et al. MOVPE growth of AlGaAs/GaInP diode lasers. J. Electron. Mater. 29, 57–61 (2000). https://doi.org/10.1007/s11664-000-0095-3
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DOI: https://doi.org/10.1007/s11664-000-0095-3