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Coexistence of Bipolar and Unipolar Resistive Switching Behavior in Ag/ZnMn2O4/p+-Si Device

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Abstract

ZnMn2O4 thin films were deposited by a sol-gel technique onto a p+-Si substrate, and a RRAM device with the Ag/ZnMn2O4/p+-Si structure was fabricated. The microstructure of ZnMn2O4 films and the resistive switching behavior of Ag/ZnMn2O4/p+-Si device were investigated. ZnMn2O4 thin films had a spinel structure after annealing at 650 °C for 1 h. The Ag/ZnMn2O4/p+-Si device showed unipolar and/or bipolar resistive switching behavior, exhibiting different ION/IOFF ratio and switching endurance properties. In bipolar resistive switching, high-resistance-state (HRS) conduction was dominated by the space-charge-limited conduction mechanism, whereas the filament conduction mechanism dictated the low resistance state (LRS). For unipolar resistive switching, HRS and LRS were controlled by the filament conduction mechanism. For bipolar resistive switching, the conduction process can be explained by the space-charge region of the p-n junction.

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Authors and Affiliations

  1. School of Materials Science and Engineering, Guilin University of Electronic Technology, Guilin, 541004, China

    Yupei Zhang  (张玉佩), Hua Wang  (王华), Jiwen Xu, Zhida Li & Ling Yang

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  1. Yupei Zhang  (张玉佩)
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  2. Hua Wang  (王华)
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  3. Jiwen Xu
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  4. Zhida Li
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  5. Ling Yang
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Corresponding author

Correspondence to Hua Wang  (王华).

Additional information

Funded by the National Natural Science Foundation of China (No.51262003) and the Guangxi Key Laboratory of Information Materials (Guilin University of Electronic Technology), China (No. 1110908-10-Z)

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Zhang, Y., Wang, H., Xu, J. et al. Coexistence of Bipolar and Unipolar Resistive Switching Behavior in Ag/ZnMn2O4/p+-Si Device. J. Wuhan Univ. Technol.-Mat. Sci. Edit. 33, 1433–1436 (2018). https://doi.org/10.1007/s11595-018-1987-5

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  • DOI: https://doi.org/10.1007/s11595-018-1987-5

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